CMOS Stage Ripple-Carry Binary Counter/Divider Oscillator Pinout
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CD4060BMS
CMOS Stage Ripple-Carry Binary Counter/Divider Oscillator
Pinout
RESET
Features
High Voltage Type (20V Rating) Common Reset 12MHz Clock Rate Fully Static Operation Buffered Inputs Outputs Schmitt Trigger Input Pulse Line Standardized, Symmetrical Output Characteristics 100% Tested Quiescent Current Parametric Ratings Meets Requirements JEDEC Tentative Standard 13B, "Standard Specifications Description Series CMOS Devices"
Functional Diagram
STAGE RIPPLE COUNTER OSCILLATOR
Oscillator Features
Active Components Chip Crystal Oscillator Configuration Oscillator Frequency 690kHz Min.
Applications
Control counters Timers Frequency Dividers Time Delay Circuits
Description
CD4060BMS consists oscillator section ripple carry binary counter stages. oscillator configuration allows design either crystal oscillator circuits. RESET input provided which resets counter state disables oscillator. high level RESET line accomplishes reset function. counter stages master slave flip-flops. state counter advanced step binary order negative transition (and inputs outputs fully buffered. Schmitt trigger action input pulse line permits unlimited input pulse rise fall times. CD4060BMS supplied these lead outline packages: Braze Seal Frit Seal Ceramic Flatpack
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
File Number
3317
7-949
Specifications CD4060BMS
Absolute Maximum Ratings
Supply Voltage Range, (VDD) -0.5V +20V (Voltage Referenced Terminals) Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Operating Temperature Range -55oC +125oC Package Types Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (During Soldering) +265oC Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case Maximum
Reliability Information
Thermal Resistance Ceramic FRIT Package 80oC/W 20oC/W Flatpack Package 70oC/W 20oC/W Maximum Package Power Dissipation (PD) +125 -55oC +100oC (Package Type 500mW +100oC +125oC (Package Type Derate Linearity 12mW/oC 200mW Device Dissipation Output Transistor 100mW Full Package Temperature Range (All Package Types) Junction Temperature +175oC
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS 18V, Input Leakage Current Input Leakage Current Output Voltage Output Voltage Output Current (Sink) (Excluding pins VOL15 VOH15 IOL5 IOL10 IOL15 Output Current (Source) (Excluding pins IOH5A IOH5B IOH10 IOH15 Threshold Voltage Threshold Voltage Functional VNTH VPTH 15V, Load 15V, Load (Note VOUT 0.4V 10V, VOUT 0.5V 15V, VOUT 1.5V VOUT 4.6V VOUT 2.5V 10V, VOUT 9.5V 15V, VOUT 13.5V 10V, -10µA 10µA 2.8V, 20V, 18V, Input Voltage (Note Input Voltage High (Note Input Voltage (Note Input Voltage High (Note 4.5V, 0.5V 4.5V, 0.5V 15V, 13.5V, 1.5V 15V, 13.5V, 1.5V LIMITS TEMPERATURE
PARAMETER Supply Current
SYMBOL
CONDITIONS (NOTE 20V,
-100 -1000 -100
1000 1000 -0.53 -1.8 -1.4 -3.5 -0.7
UNITS
+125oC -55oC +25o
+125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC
+25oC, +125oC, -55oC 14.95 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 0.53 -2.8
VDD/2 VDD/2
NOTES: voltages referenced device GND, 100% testing being implemented. Go/No test with limits applied inputs.
accuracy, voltage measured differentially VDD. Limit 0.050V max.
7-950
Specifications CD4060BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS TEMPERATURE TTHL TTLH +25oC +125oC, -55oC LIMITS
PARAMETER Propagation Delay Input Pulse Operation Propagation Delay Propagation Delay RESET Transition Time
SYMBOL TPHL1 TPLH1 TPHL2 TPLH2 TPHL3
CONDITIONS (NOTES
UNITS
+25oC +125 +125oC, -55oC +125 +125oC, -55oC
2.59
Maximum Input Pulse Frequency NOTES:
50pF, 200K -55oC +125oC limits guaranteed, 100% testing being implemented. TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL CONDITIONS NOTES TEMPERATURE -55oC, +25oC
4.95 9.95 0.36 0.64
-0.36 -0.64 -1.15 -2.0 -0.9 -1.6
UNITS
+125 10V,
+25oC
+125 15V, -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) (Excluding pins Output Current (Sink) (Excluding pins Output Current (Sink) (Excluding pins Output Current (Source) (Excluding pins Output Current (Source) (Excluding pins Output Current (Source) (Excluding pins IOL5 Load 10V, Load Load 10V, Load VOUT 0.4V
+125oC,
-55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC IOL10 10V, VOUT 0.5V
+125
IOL15
15V, VOUT 1.5V
+125
-55oC IOH5A VOUT 4.6V +125oC IOH5B VOUT 2.5V
+125oC
IOH10
10V, VOUT 9.5V
+125oC
7-951
Specifications CD4060BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Output Current (Source) (Excluding pins Input Voltage Input Voltage High Drive Current Oscillator Design SYMBOL IOH15 CONDITIONS =15V, VOUT 13.5V NOTES TEMPERATURE +125oC 10V, 10V, 10V, 15V, 1.5V Drive Current Oscillator Design Propagation Delay Input Pulse Propagation Delay Propagation Delay RESET Transition Time TPHL1 TPLH1 TPHL2 TPLH2 TPHL3 TTHL TTLH Minimum Input Pulse Width 100kHz Operation 10µF 10V, 50µF 15V, 10µF Operation 500k 10V, 300k 15V, 300k Maximum Oscillator Frequency (Note Operation Variation Frequency (Unit-to-Unit) Variation Frequency with Voltage Change (Same Unit) 15pF 200pF 560K 200pF 560K +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25o
0.16 0.42 -1.0 21.1
-2.4 -4.2 -.16 -.42 1000
UNITS
+25o
+25oC +25oC
+25o
+25oC
Maximum Input Pulse Frequency Minimum RESET Pulse Width
+25o
+25o
+25oC +25oC
+25oC
+25oC
+25oC +25oC
+25oC
7-952
Specifications CD4060BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Capacitance NOTES: voltages referenced device GND. parameters listed Table controlled design process directly tested. These parameters characterized initial design release upon design changes which would affect these characteristics. 50pF, 200K, Input 20ns. Oscillator applications recommended supply voltages below 50k. TABLE POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current Threshold Voltage Threshold Voltage Delta Threshold Voltage Threshold Voltage Delta Functional SYMBOL VNTH VPTH CONDITIONS 20V, 10V, -10µA 10V, -10µA 10µA 10µA 18V, Propagation Delay Time TPHL TPLH +25oC NOTES TEMPERATURE +25oC +25oC +25oC
SYMBOL
CONDITIONS Input
NOTES
TEMPERATURE +25oC
UNITS
-2.8 VDD/2
-0.2 VDD/2 1.35 +25oC Limit
UNITS
NOTES: voltages referenced device GND. 50pF, 200K, Input 20ns.
Table +25oC limit. Read Record
TABLE BURN-IN LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current MSI-2 Output Current (Sink) Output Current (Source) SYMBOL IOL5 IOH5A 1.0µA Pre-Test Reading Pre-Test Reading DELTA LIMIT
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test (Post Burn-In) Interim Test (Post Burn-In) (Note Interim Test (Post Burn-In) (Note Final Test Group Group Subgroup Subgroup Group MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups Subgroups IDD, IOL5, IOH5A READ RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
7-953
Specifications CD4060BMS
TABLE APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP MIL-STD-883 METHOD GROUP SUBGROUPS READ RECORD
NOTE: Parameteric, Functional; Cumulative Static TABLE TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD POST-IRRAD Table READ RECORD PRE-IRRAD POST-IRRAD Table
CONFORMANCE GROUPS Group Subgroup
TABLE BURN-IN IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In Note Static Burn-In Note Dynamic Burn-In Note Irradiation Note NOTES: Each except will have series resistor 0.5V Each except will have series resistor Group Subgroup sample size dice/wafer, failures, 0.5V OPEN GROUND -0.5V 50kHz 25kHz
Logic Diagram
FF2-FF13 FF14
RESET Q12, ***COUNTER ADVANCES BINARY COUNT EACH NEGATIVE GOING TRANSITION (AND *ALL INPUTS PROTECTED CMOS PROTECTION NETWORK
HIGH DOMINATES (RESETS STAGES)
DETAIL TYPICAL FLIP-FLOP STAGE
7-954
CD4060BMS Typical Performance Curves
OUTPUT (SINK) CURRENT (IOL) (mA) OUTPUT (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) +25oC AMBIENT TEMPERATURE (TA) +25oC
GATE-TO-SOURCE VOLTAGE (VGS)
15.0 GATE-TO-SOURCE VOLTAGE (VGS) 12.5 10.0
DRAIN-TO-SOURCE VOLTAGE (VDS)
DRAIN-TO-SOURCE VOLTAGE (VDS)
FIGURE TYPICAL N-CHANNEL OUTPUT SINK CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
FIGURE MINIMUM N-CHANNEL OUTPUT (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
-10V
-10V
-15V
-15V
FIGURE TYPICAL P-CHANNEL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
FIGURE MINIMUM P-CHANNEL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
PROPAGATION DELAY TIME (tPLH, tPHL) (ns)
AMBIENT TEMPERATURE (TA) +25oC
PROPAGATION DELAY TIME (tPLH, tPHL) (ns)
AMBIENT TEMPERATURE (TA) +25oC SUPPLY VOLTAGE (VDD)
SUPPLY VOLTAGE (VDD)
LOAD CAPACITANCE (CL) (pF)
LOAD CAPACITANCE (CL) (pF)
FIGURE TYPICAL PROPAGATION DELAY TIME QN+1) FUNCTION LOAD CAPACITANCE
FIGURE TYPICAL PROPAGATION DELAY TIME OUTPUT) FUNCTION LOAD CAPACITANCE
7-955
CD4060BMS Typical Performance Curves
(Continued)
DYNAMIC POWER DISSIPATION (PD) (µW)
AMBIENT TEMPERATURE (TA) +25oC TRANSITION TIME (tTHL, tTLH) (ns)
AMBIENT TEMPERATURE (TA) +25oC
SUPPLY VOLTAGE (VDD)
SUPPLY VOLTAGE (VDD)
LOAD CAPACITANCE 50pF 15pF
LOAD CAPACITANCE (CL) (pF)
INPUT FREQUENCY (kHz)
FIGURE TYPICAL TRANSITION TIME FUNCTION LOAD CAPACITANCE
FIGURE TYPICAL DYNAMIC POWER DISSIPATION FUNCTION INPUT FREQUENCY
Test Circuits
500µF
PULSE GENERATOR
NOTE: 10RX RXCX
FIGURE
DYNAMIC POWER DISSIPATION TEST CIRCUIT
FIGURE TYPICAL CIRCUIT
7-956
CD4060BMS Test Circuits
(Continued)
NOTE: CXTAL CSTRAY Broader frequency response Current limiting
FIGURE TYPICAL CRYSTAL CIRCUIT
Chip Dimensions Layout
Dimension parenthesis millimeters derived from basic inch dimensions indicated. Grid graduations mils (10-3 inch).
METALLIZATION: PASSIVATION:
Thickness:
Silane
BOND PADS: 0.004 inches 0.004 inches THICKNESS: 0.0198 inches 0.0218 inches
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries. information regarding Intersil Corporation products, site http://www.intersil.com
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