Radiation Hardened Inverting 8-Bit Parallel-Input/Serial Output Shift
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HCS165MS
Radiation Hardened Inverting 8-Bit Parallel-Input/Serial Output Shift Register
Pinouts
LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH VIEW
Features
Micron Radiation Hardened CMOS Total Dose 200K (Si) Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: 1012 (Si)/s
Dose Rate Upset >1010 (Si)/s 20ns Pulse Latch-Up Free Under Conditions Fanout (Over Temperature Range) Standard Outputs LSTTL Loads Military Temperature Range: -55oC +125oC Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels Input Current Levels VOL,
LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH VIEW
Description
Intersil HCS165MS Radiation Hardened 8-Bit Parallel-In/Serial-Out Shift Register with complementary serial outputs asynchronous parallel load input. HCS165MS utilizes advanced CMOS/SOS technology achieve high-speed operation. This device member radiation hardened, high-speed, CMOS/SOS Logic Family. HCS165MS supplied lead Ceramic flatpack suffix) SBDIP Package suffix).
Ordering Information
PART NUMBER HCS165DMSR HCS165KMSR HCS165D/Sample HCS165K/Sample HCS165HMSR TEMPERATURE RANGE -55oC +125oC -55oC +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class Equivalent Intersil Class Equivalent Sample Sample PACKAGE Lead SBDIP Lead Ceramic Flatpack Lead SBDIP Lead Ceramic Flatpack
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
Spec Number File Number
518757 2481.2
HCS165MS Functional Diagram
TRUTH TABLE INPUTS OPERATING MODES Parallel Load Serial Shift Hold Nothing" REGISTER OUTPUTS
HIGH voltage level HIGH voltage level setup time prior LOW-to-HIGH clock transition voltage level voltage level setup time prior LOW-to-High clock transition Lower case letters indicate state referenced output set-up time prior LOW-to-HIGH clock transition. Don't Care LOW-to-HIGH clock transition.
Spec Number
518757
Specifications HCS165MS
Absolute Maximum Ratings
Supply Voltage (VCC). -0.5V +7.0V Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Drain Current, Output. .±25mA (All Voltage Reference Terminal) Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (Soldering 10sec) +265oC Junction Temperature (TJ) +175oC Classification Class
Reliability Information
Thermal Resistance SBDIP Package. 73oC/W 24oC/W Ceramic Flatpack Package 114oC/W 29oC/W Maximum Package Power Dissipation +125oC Ambient SBDIP Package. 0.68W Ceramic Flatpack Package 0.44W device power exceeds package dissipation capability, provide heat sinking derate linearly following rate: SBDIP Package. 13.7mW/oC Ceramic Flatpack Package 8.8mW/oC
CAUTION: with semiconductors, stress listed under "Absolute Maximum Ratings" applied devices (one time) without resulting permanent damage. This stress rating only. Exposure absolute maximum rating conditions extended periods affect device reliability. conditions listed under "Electrical Performance Characteristics" only conditions recommended satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). +4.5V +5.5V Input Rise Fall Times 4.5V (TR, .500ns Operating Temperature Range (TA) -55oC +125oC Input Voltage (VIL). 0.0V Input High Voltage (VIH)
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Output Current (Sink) 4.5V, 4.5V, VOUT 0.4V, Output Current (Source) 4.5V, 4.5V, VOUT -0.4V, 4.5V, 3.15V, 50µA, 1.35V 5.5V, 3.85V, 50µA, 1.65V Output Voltage High 4.5V, 3.15V, -50µA, 1.35V 5.5V, 3.85V, -50µA, 1.65V Input Leakage Current 5.5V, LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC -4.8 -4.0 UNITS
PARAMETER Quiescent Current
SYMBOL
(NOTE CONDITIONS 5.5V,
Output Voltage
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
-0.1 -0.1
+25oC, +125oC, -55oC
+25oC +125oC, -55oC +25oC, +125oC, -55oC
±0.5 ±5.0
Noise Immunity Functional Test
4.5V, 0.70(VCC), 0.30(VCC) (Note
NOTES: voltages reference device GND. functional tests 4.0V recognized logic "1", 0.5V recognized logic "0".
Spec Number
518757
Specifications HCS165MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS TPLH TPHL 4.5V TPLH TPHL 4.5V TPLH TPHL 4.5V NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
PARAMETER
SYMBOL TPLH TPHL
(NOTES CONDITIONS 4.5V
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE CONDITIONS 5.0V, 5.0V, 0.0V, 1MHz 5.0V, 5.0V, 0.0V, 1MHz 5.0V, 5.0V, 0.0V, 1MHz 4.5V, 4.5V, 0.0V LIMITS TEMPERATURE +25oC +125oC, -55oC UNITS
PARAMETER Capacitance Power Dissipation Input Capacitance
SYMBOL
+25oC +125oC, -55oC
Output Capacitance
COUT
+25oC +125oC, -55oC
Pulse Width Time Setup Time Hold Time Hold Time Recovery Time Maximum Frequency Output Transition Time
+25oC +125oC, -55oC
4.5V, 4.5V, 0.0V
+25oC +125oC, -55oC
4.5V, 4.5V, 0.0V
+25oC +125oC, -55oC
4.5V, 4.5V, 0.0V
+25oC +125oC, -55oC
TREC
4.5V, 4.5V, 0.0V
+25oC +125oC, -55oC
FMAX
4.5V, 4.5V, 0.0V
+25oC +125oC, -55oC
TTHL TTLH
4.5V, 4.5V, 0.0V
+25oC +125oC, -55oC
NOTE: parameters listed Table controlled design process parameters. Limits guaranteed directly tested. These parameters characterized upon initial design release upon design changes which affect these characteristics.
Spec Number
518757
Specifications HCS165MS
TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL (NOTES CONDITIONS 5.5V, 4.5V, GND, VOUT 0.4V 4.5V, GND, VOUT -0.4V 4.5V 5.5V, 0.70(VCC), 0.30(VCC), 50µA 4.5V 5.5V, 0.70(VCC), 0.30(VCC), -50µA 5.5V, 4.5V, 0.70(VCC), 0.30(VCC), (Note 4.5V TEMPERATURE +25oC +25oC 0.75 UNITS
Output Current (Source) Output Voltage
+25oC
-4.0
+25oC
Output Voltage High
+25oC
-0.1
Input Leakage Current Noise Immunity Functional Test
+25oC +25oC
TPLH TPHL TPLH TPHL TPLH TPHL TPLH TPHL
+25oC
4.5V
+25oC
4.5V
+25oC
4.5V
+25oC
NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. functional tests 4.0V recognized logic "1", 0.5V recognized logic "0".
TABLE BURN-IN OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP SUBGROUP
PARAMETER IOL/IOH
DELTA LIMIT 12µA -15% Hour
Spec Number
518757
Specifications HCS165MS
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Final Test Group (Note Group Subgroup Subgroup Group NOTES: Alternate Group testing accordance with method 5005 MIL-STD-883 exercised. Table parameters only. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups (Note ICC, IOL/H READ RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
TABLE TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group Subgroup NOTE: Except test which will performed 100% Go/No-Go. TEST METHOD 5005 POST Table READ RECORD POST Table (Note
TABLE STATIC DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 0.5V 0.5V 50kHz 25kHz
STATIC BURN-IN TEST CONNECTIONS (Note
STATIC BURN-IN TEST CONNECTIONS (Note
DYNAMIC BURN-IN TEST CONNECTIONS (Note NOTES: Each except will have resistor static burn-in Each except will have resistor dynamic burn-in
TABLE IRRADIATION TEST CONNECTIONS OPEN GROUND 0.5V
NOTE: Each except will have resistor irradiation testing. Group Subgroup sample size dice/wafer failures.
Spec Number
518757
HCS165MS Intersil Space Level Product Flow `MS'
Wafer Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, Samples/Wafer, Rejects 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Shear Monitor, Method 2019 2027 100% Internal Visual Inspection, Method 2010, Condition 100% Temperature Cycle, Method 1010, Condition Cycles 100% Constant Acceleration, Method 2001, Condition Method 5004 100% PIND, Method 2020, Condition 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T2) 100% Delta Calculation (T0-T2) 100% Method 5004 (Notes 1and 100% Dynamic Burn-In, Condition hrs., +125oC Equivalent, Method 1015 100% Interim Electrical Test (T3) 100% Delta Calculation (T0-T3) 100% Method 5004 (Note 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 100% External Visual, Method 2009 Sample Group Method 5005 (Note 100% Data Package Generation (Note
NOTES: Failures from Interim electrical test combined determining Failures from subgroup deltas used calculating PDA. maximum allowable with more than failures from subgroup Radiographic (X-Ray) inspection performed point after serialization allowed Method 5004. Alternate Group testing performed allowed MIL-STD-883, Method 5005. Data Package Contents: Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Date Code, Intersil Part Number, Number, Quantity). Wafer Acceptance Report (Method 5007). Includes reproductions photos with percent step coverage. GAMMA Radiation Report. Contains Cover page, disposition, Dose, Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read Record data file Intersil. X-Ray report film. Includes penetrometer measurements. Screening, Electrical, Group attributes (Screening attributes begin after package seal). Serial Number Sheet (Good units serial number number). Variables Data (All Delta operations). Data identified serial number. Data header includes number date test. Certificate Conformance part shipping invoice part Data Book. Certificate Conformance signed authorized Quality Representative.
Spec Number
518757
HCS165MS Timing Diagram
TPLH TPHL TTLH TTHL OUTPUT 50pF INPUT
Load Circuit
TEST POINT
OUTPUT
VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 UNITS
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries. information regarding Intersil Corporation products, site http://www.intersil.com
Spec Number
518757
HCS165MS Characteristics
DIMENSIONS: mils METALLIZATION: Type: AlSi Metal Thickness: GLASSIVATION: Type: SiO2 Thickness: WORST CASE CURRENT DENSITY: 105A/cm2 BOND SIZE: 100µm 100µm mils
Metallization Mask Layout
HCS165MS
(16) (15) (14)
(13)
(12)
(11)
(10)
NOTE: diagram generic plot from similar device. intended indicate approximate size bond location. mask series HCS165 TA14385A.
Spec Number
518757
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