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Radiation Hardened Programmable Power HS-3530ARH Power Operationa


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HS-3530ARH
Radiation Hardened Programmable Power
HS-3530ARH Power Operational Amplifier which internally compensated monolithic device offering wide range performance specifications. Parameters such power dissipation, slew rate, bandwidth, noise input parameters programmed selecting external resistor current source. Supply voltages used with little degradation performance. HS-3530ARH been specifically designed meet exposure space radiation environments. Operation from -55oC 125oC guaranteed. major advantage HS-3530ARH that operating characteristics remain virtually constant over wide supply range (±3V ±15V), allowing amplifier offer maximum performance almost system, including battery operated equipment. primary application this device active filtering conditioning wide variety signals that differ frequency amplitude. Also, modulating current, used designs such current controlled oscillators/modulators, sample hold circuits variable active filters.
Features
Radiation Performance Gamma Dose RAD(Si) Immune (RSG Process) Wide Range Programming Slew Rate 0.025 0.1V/µs Gain Bandwidth 30kHz 750kHz Wide Range Programming Power Supply Range ±3.0V ±15V Supply Current 15µA 150µA Output Current 0.25mA 2.5mA Quiescent Power 4.8mW (Max) Dielectrically Isolated Device Islands Short Circuit Protection Full -55oC 125oC Military Temperature Range
Pinouts
HS2-3530ARH (CAN), MACY1-X8 VIEW
ISET OFFSET NULL INVERTING INPUT
Specifications
Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications HS-3530ARH contained 5962-95687. "hot-link" DSCC website provided homepage downloading document. Intersil Quality Management Plan, listing screening operations, available website.
OUTPUT
NON-INVERTING INPUT
OFFSET NULL
HS9-3530ARH (FLATPACK), CDFP3-F10 VIEW
OFFSET ISET OUTPUT OFFSET
Ordering Information
ORDERING NUMBER 5962F9568701QGA 5962F9568701VGA 5962F9568701VXC 5962F9568701V9A PART NUMBER HS2-3530ARH-8 HS2-3530ARH-Q HS9-3530ARH-Q HS0-3530ARH-Q HS2-3530ARH/Proto HS9-3530ARH/Proto TEMP. RANGE (oC)
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
HS-3530ARH Characteristics
DIMENSIONS: 1720µm 1390µm 533µm ±25.4µm mils mils mils mil) INTERFACE MATERIALS GLASSIVATION Type: Silox (SiO2) Thickness: 8.0kA ±1.0kA METALLIZATION Type: AlSiCu Thickness: 16.0kA ±2kA SUBSTRATE: Radiation Hardened Silicon Gate, Dielectric Isolation BACKSIDE FINISH: Silicon ASSEMBLY RELATED INFORMATION SUBSTRATE POTENTIAL: Unbiased (DI) ADDITIONAL INFORMATION WORST CASE CURRENT DENSITY: <2.0 A/cm2 TRANSISTOR COUNT:
Metallization Mask Layout
Numbers shown Package
HS-3530ARH
IN(2) OFFSET
ISET
OFFSET OUTPUT
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029

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