Radiation Hardened, Very Noise Quad Operational Amplifier HS-OP47

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Radiation Hardened, Very Noise Quad Operational Amplifier HS-OP47

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HS-OP470ARH
Radiation Hardened, Very Noise Quad Operational Amplifier
HS-OP470ARH radiation hardened, monolithic quad operational amplifier that provides highly reliable performance harsh radiation environments. excellent noise characteristics coupled with unique array dynamic specifications make this amplifier well-suited variety satellite system applications. Dielectrically isolated, bipolar processing makes this device immune Single Event Latch-up. HS-OP470ARH shows almost change offset voltage after exposure 100K RAD(Si) gamma radiation, with only minor increase current. Complementing these specifications post radiation open loop gain excess 40kV/V. This quad operational amplifier available industry standard pinout, allowing immediate interchangeability with most other quad operational amplifiers. Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers must used when ordering. Detailed Electrical Specifications this contained 5962-98533. "hot-link" provided homepage with instructions downloading.
Features
Qualified MIL-PRF-38535 Requirements Radiation Environment Total Dose RAD(Si) Noise 1kHz 4.3nV/Hz (Typ) 1kHz .0.6pA/Hz (Typ) Offset Voltage. 2.1mV (Max) High Slew Rate 1.7V/µs (Min) Gain Bandwidth Product 8.0MHz (Typ)
Applications
High Active Filters Voltage Regulators Integrators Signal Generators Voltage References Space Environments
Ordering Information
PART NUMBER 5962R9853301VXC INTERSIL PART NUMBER HS9-OP470ARH-Q HS9-OP470ARH/Sample TEMP. RANGE (oC) PACKAGE Flatpack Flatpack CASE OUTLINE CDFP3-F14 CDFP3-F14
Pinout
HS-OP470ARH (FLATPACK) VIEW
-IN1 +IN1 +IN2 -IN2 -IN4 +IN4 V+IN3 -IN3
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
File Number
4471
HS-OP470ARH Metallization Mask Layout
DIMENSIONS: mils mils mils (2420µm 2530µm 483µm ±25.4µm) METALLIZATION: Type: Thickness: SUBSTRATE POTENTIAL (Powered Up): Unbiased BACKSIDE FINISH: Silicon
+IN2
PASSIVATION: Type: Nitride (SI3N4) over Silox (SIO2, Phos.) Silox Thickness: Nitride Thickness: WORST CASE CURRENT DENSITY: <2.0 A/cm2 TRANSISTOR COUNT: PROCESS: Bipolar Dielectric Isolation
+IN1
-IN2
-IN1
OUT2 OUT3
OUT1 OUT4
-IN3
-IN4
+IN3
+IN4
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries. information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029

Radiation Hardened, Very Noise Quad Operational Amplifier HS-OP47

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