Werte Maximum rated values Elektrische Eigenschaften Electrical p

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Werte Maximum rated values Elektrische Eigenschaften Electrical p

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Werte Maximum rated values
Elektrische Eigenschaften Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collctor current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral Diode value, Diode insulation test voltage 25°C 80°C VCES IC,nom. ICRM 1700
C=25°C, Transistor
Ptot
1660
VGES
IFRM
10ms, 125°C
t.b.d.
RMS, min.
VISOL
Charakteristische Werte Characteristic values
Transistor Transistor
Kollektor-Emitter collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge input capacitance reverse transfer capacitance 300A, 15V, 25°C 300A, 15V, 125°C 12mA, VGE, 25°C VGE(th)
min.
typ.
max.
2,45 t.b.d.
-15V +15V
1MHz,Tvj 25°C,VCE 25V,
Cies
1MHz,Tvj 25°C,VCE 25V, 1700V, 25°C
Cres
Kollektor-Emitter Reststrom collector-emitter cut-off current
1700V, 125°C
ICES
Gate-Emitter Reststrom gate-emitter leakage current
20V, 25°C
IGES
prepared Alfons Wiesenthal approved Christoph
date publication: 2002-07-26 revision:
DB_FS300R17KE3_2.0.xls
Charakteristische Werte Characteristic values
Transistor Transistor
(ind. Last) turn delay time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C Anstiegszeit (induktive Last) rise time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C (ind. Last) turn delay time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C Fallzeit (induktive Last) fall time (inductive load) 300A, 900V ±15V, 4,7W, 125°C ±15V, 4,7W, 125°C Einschaltverlustenergie Puls turn-on energy loss pulse Abschaltverlustenergie Puls turn-off energy loss pulse Data stray inductance module Modulleitungswiderstand, Chip module lead resistance, terminals chip Zweig arm, 25°C 300A, 900V, ±15V 4,7W, 125°C, 80nH 300A, 900V, ±15V 4,7W, 125°C, 80nH 10µsec, VCC=1000V, VCEmax=VCES -LsCE LsCE 1110 Eoff 0,10 0,20 td,off 0,82 0,97 0,10 0,10 td,on 0,25 0,30
min.
typ.
max.
Charakteristische Werte Characteristic values
Diode Diode
forward voltage peak reverse recovery current 300A, 25°C 300A, 125°C 300A, diF/dt 3500A/µs 900V, -15V, 25°C 900V, -15V, 125°C recovered charge 300A, diF/dt 3500A/µs 900V, -15V, 25°C 900V, -15V, 125°C Abschaltenergie Puls reverse recovery energy 300A, diF/dt 3500A/µs 900V, -15V, 25°C 900V, -15V, 125°C Erec
min.
typ.
max.
t.b.d.
DB_FS300R17KE3_2.0.xls
Charakteristische Werte Characteristic values
Widerstand thermistor
Nennwiderstand rated resistance Abweichung R100 devitation R100 Verlustleistung Power dissipation Wert value 25°C
min.
typ.
max.
100°C; R100 493W
DR/R
3375
25°C
B25/50
exp[B(1/T2 1/T1)]
Thermische Eigenschaften Thermal properties
min.
Innerer thermal resistance, junction case thermal resistance, case heatsink Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor transistor, Diode/Diode, Modul module lPaste W/m*K lgrease W/m*K RthCK RthJC
typ.
0,005
max.
0,075 0,130
vjop
Mechanische Eigenschaften Mechanical properties
siehe Anlage case, appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance comperative tracking index Anzugsdrehmoment mech. Befestigung mounting torque Anzugsdrehmoment elektr. terminal connection torque Gewicht weight Schraube screw Al2O3
terminals
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen This technical information specifies semiconductor devices promises characteristics. valid combination with belonging technical notes.
DB_FS300R17KE3_2.0.xls
Ausgangskennlinie (typisch) Output characteristic (typical) (VCE)
25°C 125°C
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
VGE=9V VGE=11V VGE=13V VGE=15V VGE=19V
(VCE)
125°C
DB_FS300R17KE3_2.0.xls
(typisch) Transfer characteristic (typical) (VGE)
25°C 125°C
Inversdiode (typisch) Forward characteristic inverse diode (typical)
25°C 125°C
(VF)
DB_FS300R17KE3_2.0.xls
Schaltverluste (typisch) (IC) Eoff (IC) Erec (IC) Switching losses (typical) ±15V, RGon RGoff =4,7W, 900V, 125°C
Eoff Erec
[mJ]
Schaltverluste (typisch) Switching losses (typical)
(RG) Eoff (RG) Erec (RG)
±15V, 300A 900V 125°C
Eoff Erec
[mJ]
DB_FS300R17KE3_2.0.xls
Transienter Transient thermal impedance ZthJC
ZthJC [K/W]
0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01
[K/kW] IGBT IGBT [K/kW] Diode
Diode
19,09 0,01565 44,06 0,02103
28,21 0,03977 48,89 0,03011
21,78 0,07521 30,96 0,08672
5,924 1,443 1,1583
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
±15V, Ohm, 125°C
IC,Chip
1000 1200 1400 1600 1800
DB_FS300R17KE3_2.0.xls
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Werte Maximum rated values Elektrische Eigenschaften Electrical p

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