Werte maximum rated values Elektrische Eigenschaften electrical p

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Werte maximum rated values Elektrische Eigenschaften electrical p

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FS300R12KE3
Werte maximum rated values
Elektrische Eigenschaften electrical properties
Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral value Isolations insulation test voltage 10ms, Tvj= 125°C RMS, 50Hz, 1min. Tvj= 80°C 25°C 1ms, 80°C 25°C; Transistor VCES ICRM Ptot VGES IFRM VISOL 1200
1,45
Charakteristische Werte characteristic values
Transistor Wechselrichter transistor inverter
Kollektor Emitter collector emitter saturation voltage Gate Schwellenspannung gate threshold voltage Gateladung gate charge input capacitance reverse transfer capacitance Kollektor Emitter Reststrom collector emitter current Gate Emitter Reststrom gate emitter leakage current 300A, VGE= 15V, Tvj= 25°C 300A, VGE= 15V, Tvj= 125°C 12mA, VCE= VGE, Tvj= 25°C VGE= -15V.+15V 1MHz, Tvj= 25°C, VCE= 25V, VGE= 1MHz, Tvj= 25°C, VCE= 25V, VGE= VGE= Tvj= 25°C, VCE= 600V VCE= VGE= 20V, Tvj= 25°C VCEsat VGE(th) Cies Cres ICES IGES min. typ. max. 2,15 t.b.d.
0,85
prepared MOD-D2; Mark approved: Wilhelm Rusche
date publication: 2002-10-28 revision:
DB_FS300R12KE3_2.0 2002-10-28
FS300R12KE3
Charakteristische Werte characteristic values
Transistor Wechselrichter transistor inverter
300A, VCC= 600V (induktive Last) turn delay time (inductive load) VGE= ±15V, 2,4, Tvj= 25°C VGE= ±15V, 2,4, Tvj= 125°C 300A, VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, 2,4, Tvj= 25°C VGE= ±15V, 2,4, Tvj= 125°C 300A, VCC= 600V (induktive Last) turn delay time (inductive load) VGE= ±15V, 2,4, Tvj= 25°C VGE= ±15V, 2,4, Tvj= 125°C 300A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie Puls turn energy loss pulse Ausschaltverlustenergie Puls turn energy loss pulse Kurzschlussverhalten data stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip 25°C VGE= ±15V, 2,4, Tvj= 25°C VGE= ±15V, 2,4, Tvj= 125°C 300A, VCC= 600V, 80nH VGE= ±15V, 2,4, Tvj= 125°C 300A, VCC= 600V, 80nH VGE= ±15V, 2,4, Tvj= 125°C 10µs, 15V, 125°C VCC= 900V, VCEmax= VCES Eoff 0,13 0,16 td,off 0,55 0,65 0,09 0,10 td,on 0,25 0,30 min. typ. max.
1200
Charakteristische Werte characteristic values
Diode Wechselrichter diode inverter
Durchlassspannung forward voltage peak reverse recovery current 300A, VGE= Tvj= 25°C 300A, VGE= Tvj= 125°C 300A, -diF/dt= 3500A/µs 600V, VGE= -15V, Tvj= 25°C 600V, VGE= -15V, Tvj= 125°C recovered charge 300A, -diF/dt= 3500A/µs 600V, VGE= -15V, Tvj= 25°C 600V, VGE= -15V, Tvj= 125°C Ausschaltenergie Puls reverse recovery energy 300A, -diF/dt= 3500A/µs 600V, VGE= -15V, Tvj= 25°C 600V, VGE= -15V, Tvj= 125°C Erec 1,65 1,65 2,15 t.b.d.
DB_FS300R12KE3_2.0 2002-10-28
FS300R12KE3
Charakteristische Werte characteristic values
NTC-Widerstand NTC-thermistor
Nennwiderstand rated resistance Abweichung R100 deviation R100 Verlustleistung power dissipation B-Wert B-value 25°C 100°C, R100= 25°C exp[B(1/T2 1/T1)] B25/50 min. typ. max.
3375
Thermische Eigenschaften thermal properties
Innerer thermal resistance, junction case; thermal resistance, case heatsink Sperrschichttemp. maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor Wechelr. transistor inverter Diode Wechselrichter diode inverter Modul module Paste= 1W/m*K grease= 1W/m*K RthJC RthCK Tstg 0,005 0,085 0,150
Mechanische Eigenschaften mechanical properties
siehe Anlage case, appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance distance comperative tracking index Anzugsdrehmoment, mech. Befestigung mounting torque Anzugsdrehmoment, elektr. terminal connection torque Gewicht weight Schraube screw Al2O3 12,7
10,0
terminals
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung technischen This technical information specifies semiconductor devices promises characteristics. valid with belonging technical notes.
DB_FS300R12KE3_2.0 2002-10-28
FS300R12KE3
Ausgangskennlinie (typisch) output characteristic (typical)
25°C 125°C
f(VCE) VGE=
Ausgangskennlinienfeld (typisch) output characteristic (typical)
VGE=19V
f(VCE) Tvj= 125°C
VGE=17V VGE=15V VGE=13V VGE=11V VGE=9V
DB_FS300R12KE3_2.0 2002-10-28
FS300R12KE3
(typisch) transfer characteristic (typical)
f(VGE) VCE=
Tvj=25°C Tvj=125°C
Durchlasskennlinie Inversdiode (typisch) forward caracteristic inverse diode (typical)
f(VF)
25°C
125°C
DB_FS300R12KE3_2.0 2002-10-28
FS300R12KE3
Schaltverluste (typisch) Switching losses (typical)
(IC) Eoff (IC) Erec (IC)
VGE=±15V, RG=2,4, VCE=600V, Tvj=125°C
[mJ]
Eoff Erec
Schaltverluste (typisch) Switching losses (typical)
(RG) Eoff (RG) Erec (RG)
VGE=±15V, IC=300A, VCE=600V, Tvj=125°C
Eoff Erec
[mJ]
DB_FS300R12KE3_2.0 2002-10-28
FS300R12KE3
Transienter Transient thermal impedance
ZthJC
ZthJC [K/W]
0,01
IGBT Diode
0,001 0,001
0,01
[K/kW] IGBT IGBT [K/kW] Diode Diode
35,73 6,499E-02 63,02 6,499E-02
42,82 2,601E-02 75,63 2,601E-02
4,84 2,364E-03 8,52 2,364E-03
1,61 1,187E-05 2,83 1,187E-05
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
IC,Chip IC,Chip
VGE=±15V, Tvj=125°C
1000
1200
1400
DB_FS300R12KE3_2.0 2002-10-28
FS300R12KE3
Schaltbild Package outline Circuit diagram
DB_FS300R12KE3_2.0 2002-10-28
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Werte maximum rated values Elektrische Eigenschaften electrical p

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