Werte Maximum rated values Elektrische Eigenschaften Electrical p
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KF6C
Werte Maximum rated values
Elektrische Eigenschaften Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collctor current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral Diode value, Diode insulation test voltage 25°C C=80°C VCES IC,nom. ICRM 1700 1200
TC=25°C, Transistor
Ptot
VGES
IFRM
1200
10ms, 125°C
kA2s
RMS, min.
VISOL
Charakteristische Werte Characteristic values
Transistor Transistor
Kollektor-Emitter collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge input capacitance reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current 600A, 15V, 25°C 600A, 15V, 125°C 40mA, VGE, 25°C VGE(th)
min.
typ.
max.
-15V +15V
1MHz,Tvj 25°C,V 25V,
Cies
1MHz,Tvj 25°C,V 25V,
Cres
1700V, 25°C
ICES
20V, 25°C
IGES
prepared Alfons Wiesenthal approved Christoph 13.07.2001
date publication: 05.07.2001 revision: (preliminary)
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FF600R17KF6CB2_V.xls
KF6C
Charakteristische Werte Characteristic values
Transistor Transistor
(ind. Last) turn delay time (inductive load) 600A, 900V ±15V, 2,4W, 25°C ±15V, 2,4W, 125°C Anstiegszeit (induktive Last) rise time (inductive load) 600A, 900V ±15V, 2,4W, 25°C ±15V, 2,4W, 125°C (ind. Last) turn delay time (inductive load) 600A, 900V ±15V, 2,4W, 25°C ±15V, 2,4W, 125°C Fallzeit (induktive Last) fall time (inductive load) 600A, 900V ±15V, 2,4W, 25°C ±15V, 2,4W, 125°C Einschaltverlustenergie Puls turn-on energy loss pulse Abschaltverlustenergie Puls turn-off energy loss pulse Data stray inductance module Modulleitungswiderstand, Chip module lead resistance, terminals chip Zweig 600A, 900V, 2,4W, 125°C, 60nH 600A, 900V, 2,4W, 125°C, 60nH 10µsec, 15V, 2,4W VCC=1000V, VCEmax=VCES -LsCE LsCE 2400 Eoff 0,11 0,12 td,off 0,17 0,17 td,on
min.
typ.
max.
0,16
Charakteristische Werte Characteristic values
Diode Diode
forward voltage peak reverse recovery current 600A, 25°C 600A, 125°C 600A, diF/dt 3500A/µsec 900V, -10V, 25°C 900V, -10V, 125°C recovered charge 600A, diF/dt 3500A/µsec 900V, -10V, 25°C 900V, -10V, 125°C Abschaltenergie Puls reverse recovery energy 600A, diF/dt 3500A/µsec 900V, -10V, 25°C 900V, -10V, 125°C Erec
min.
typ.
max.
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FF600R17KF6CB2_V.xls
KF6C
Thermische Eigenschaften Thermal properties
min.
Innerer thermal resistance, junction case thermal resistance, case heatsink Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor transistor, Diode/Diode, Zweig Modul module lPaste W/m*K lgrease W/m*K RthCK RthCK RthJC
typ.
0,016 0,008
max.
0,026 0,05
Tstg
Mechanische Eigenschaften Mechanical properties
siehe Anlage case, appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance comperative tracking index Anzugsdrehmoment mech. Befestigung mounting torque Anzugsdrehmoment elektr. terminal connection torque Gewicht weight terminals terminals 1050
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen This technical information specifies semiconductor devices promises characteristics. valid combination with belonging technical notes.
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KF6C
Ausgangskennlinie (typisch) Output characteristic (typical) (VCE)
1200
1000
25°C 125°C
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
1200
(VCE)
125°C
1000
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FF600R17KF6CB2_V.xls
KF6C
(typisch) Transfer characteristic (typical) (VGE)
1200
1000
25°C 125°C
Inversdiode (typisch) Forward characteristic inverse diode (typical)
1200
(VF)
1000
25°C 125°C
5(8)
FF600R17KF6CB2_V.xls
KF6C
Schaltverluste (typisch) (IC) Eoff (IC) Erec (IC) Switching losses (typical) Rgon goff =2,4 900V, 125°C
1000 1200
Eoff Erec
[mJ]
Schaltverluste (typisch) Switching losses (typical)
1200
(RG) Eoff (RG) Erec (RG)
600A 900V 125°C
1000
Eoff Erec
[mJ]
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FF600R17KF6CB2_V.xls
KF6C
Transienter Transient thermal impedance ZthJC
ZthJC
0,01
Zth:Diode Zth:IGBT
0,001 0,001
0,01
[sec] [K/kW] IGBT [sec] IGBT [K/kW] Diode [sec] Diode
0,003 4,92 0,003 12,3 0,05 26,8 0,045 9,14 0,45 0,95 9,14 0,75
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
1200
Ohm, 125°C
1000 IC,Modul IC,Chip
1000 1200 1400 1600 1800
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FF600R17KF6CB2_V.xls
KF6C
Abmessungen external dimensions
11,5
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FF600R17KF6CB2_V.xls
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