Werte Maximum rated values Elektrische Eigenschaften Electrical p

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Werte Maximum rated values Elektrische Eigenschaften Electrical p

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Werte Maximum rated values
Elektrische Eigenschaften Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collctor current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral Diode value, Diode insulation test voltage 25°C 80°C VCES IC,nom. ICRM 1700
TC=25°C, Transistor
Ptot
1470
VGES
IFRM
10ms, 125°C
13,5
RMS, min.
VISOL
Charakteristische Werte Characteristic values
Transistor Transistor
Kollektor-Emitter collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge input capacitance reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current 300A, 15V, 25°C 300A, 15V, 125°C 12mA, VGE, 25°C VGE(th)
min.
typ.
max.
2,45
-15V +15V
1MHz,Tvj 25°C,VCE 25V,
Cies
1MHz,Tvj 25°C,VCE 25V,
Cres
1700V, 25°C
ICES
20V, 25°C
IGES
prepared Alfons Wiesenthal approved Christoph
date publication: 2002-07-15 revision:
DB_FF300R17KE3_2.0.xls
Charakteristische Werte Characteristic values
Transistor Transistor
(ind. Last) turn delay time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C Anstiegszeit (induktive Last) rise time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C (ind. Last) turn delay time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C Fallzeit (induktive Last) fall time (inductive load) 300A, 900V ±15V, 4,7W, 25°C ±15V, 4,7W, 125°C Einschaltverlustenergie Puls turn-on energy loss pulse Abschaltverlustenergie Puls turn-off energy loss pulse Data stray inductance module Modulleitungswiderstand, Chip module lead resistance, terminals chip 300A, 900V, ±15V 4,7W, 125°C, 80nH 300A, 900V, ±15V 4,7W, 125°C, 80nH 10µsec, VCC=1000V, VCEmax=VCES -LsCE terminals: LsCE 1100 Eoff 0,12 0,20 td,off 0,85 1,00 0,10 0,10 td,on 0,28 0,33
min.
typ.
max.
TC=25°C, Zweig
0,60
Charakteristische Werte Characteristic values
Diode Diode
forward voltage peak reverse recovery current 300A, 25°C 300A, 125°C 300A, diF/dt 3500A/µs 900V, -15V, 25°C 900V, -15V, 125°C recovered charge 300A, diF/dt 3500A/µs 900V, -15V, 25°C 900V, -15V, 125°C Abschaltenergie Puls reverse recovery energy 300A, diF/dt 3500A/µs 900V, -15V, 25°C 900V, -15V, 125°C Erec
min.
typ.
max.
DB_FF300R17KE3_2.0.xls
Thermische Eigenschaften Thermal properties
min.
Innerer thermal resistance, junction case thermal resistance, case heatsink Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor transistor, Diode/Diode, Modul module lPaste W/m*K lgrease W/m*K RthCK RthJC
typ.
0,01
max.
0,085 0,130
Tvjop
Tstg
Mechanische Eigenschaften Mechanical properties
siehe Anlage case, appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance comperative tracking index Anzugsdrehmoment mech. Befestigung mounting torque Anzugsdrehmoment elektr. terminal connection torque Gewicht weight Schraube screw Al2O3
terminals
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen This technical information specifies semiconductor devices promises characteristics. valid combination with belonging technical notes.
DB_FF300R17KE3_2.0.xls
Ausgangskennlinie (typisch) Output characteristic (typical) (VCE)
25°C
125°C
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
vGE=19V
(VCE)
125°C
vGE=15V vGE=13V vGE=11V
vGE=9V
DB_FF300R17KE3_2.0.xls
(typisch) Transfer characteristic (typical) (VGE)
25°C 125°C
Inversdiode (typisch) Forward characteristic inverse diode (typical)
(VF)
25°C 125°C
DB_FF300R17KE3_2.0.xls
Schaltverluste (typisch) (IC) (IC) (IC) Switching losses (typical) ±15V, Rgon Rgoff =4,7W, 900V, 125°C
[mJ]
Eoff Erec
Schaltverluste (typisch) Switching losses (typical)
[mJ]
(RG) (RG) (RG)
±15V, 300A 900V 125°C
Eoff Erec
DB_FF300R17KE3_2.0.xls
Transienter Transient thermal impedance ZthJC
ZthJC [K/W]
0,01
Zth:Diode Zth:IGBT
0,001 0,001
0,01
[K/kW] IGBT IGBT [K/kW] Diode Diode
21,63 0,01565 44,06 0,02103
31,97 0,03977 48,89 0,03011
24,69 0,07521 30,96 0,08672
6,714 1,443 1,1583
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
1000
±15V, Ohm, 125°C
IC,Modul IC,Chip
1200
1400
1600
1800
DB_FF300R17KE3_2.0.xls
DB_FF300R17KE3_2.0.xls
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Attention present product data exclusively subscribed technically experienced staff. This Data Sheet describing specification products which warranty granted exclusively pursuant terms conditions supply agreement. There will guarantee kind product specifications. Changes Data Sheet reserved. your technical departments will have evaluate suitability product intended application completeness product data with respect such application. Should require product information excess data given Data Sheet, please contact your local Sales Office "www.eupec.com sales contact". Warning technical requirements products contain dangerous substances. information types question please contact your local Sales Office "www.eupec.com sales contact".

Werte Maximum rated values Elektrische Eigenschaften Electrical p

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