Silicon Transistor Medium power amplifier Features Larg
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STS1979N
Silicon Transistor
Medium power amplifier
Features
Large collector current IC=-500mA collector saturation voltage enabling low-voltage operation VCE(sat) -0.25 Max.
Ordering Information
Type STS1979N Marking STS1979 Package Code TO-92N
Outline Dimensions
4.20~4.40
4.20~4.40
unit
2.25 Max.
0.52 Max.
13.50~14.50
0.90 Max. 1.27 Typ.
2.14 Typ.
3.55
3.09~3.29
0.40 Max.
Connections Emitter Base Collector
KSD-T0C059-000
STS1979N
Absolute Maximum Ratings
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
(Ta=25°C)
Symbol
VCBO VCEO VEBO Tstg
Rating
-500 -55~150
Unit
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCEO ICBO IEBO VCE(sat)
Test Condition
IC=-10mA, IB=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz
Min. Typ. Max.
-0.75 -0.1 -0.1 -0.25 -1.0
Unit
KSD-T0C059-000
STS1979N
Electrical Characteristic Curves
Fig. Fig.
Fig.
Fig. VCE(sat)
Fig.
Fig.
KSD-T0C059-000
STS1979N
Corp. products intended components general electronic equipment (Office communication equipment, measuring equipment, home appliance, etc.). Please make sure that consult with before these Corp. products equipments which require high quality reliability, equipments which could have major impact welfare human life(atomic energy control, airplane, spaceship, transportation, combustion control, types safety device, etc.). Corp. cannot accept liability damage which occur case these Corp. products were used mentioned equipments without prior consultation with Corp. Specifications mentioned this publication subject change without notice.
KSD-T0C059-000
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