N-Channel Enhancement Mode RDS(on), High Voltage MOSFET VDSS ID25
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CoolMOSPower MOSFET IXKG 25N80C ISO264Electrically Isolated Back Surface
N-Channel Enhancement Mode RDS(on), High Voltage MOSFET
VDSS ID25 RDS(on)
Symbol VDSS ID25 ID90 ID(RMS) dv/dt Tstg VISOL Weight
Test Conditions 25°C 150°C Continuous 25°C 90°C Package lead current limit 10A, 25°C
Maximum Ratings +150 +125 V/ns Nm/lb-in
ISO264
(TAB)
Gate, Source Patent pending
Drain,
VDSS, 150°C dIR/dt A/µs 25°C
Features Silicon chip Direct-Copper-Bond substrate High power dissipation Isolated mounting surface 2500V electrical isolation generation CoolMOS power MOSFET High blocking capability resistance Avalanche rated unclamped inductive switching (UIS) thermal resistance reduced chip thickness drain capacitance(<40pF) Applications Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) Power Factor Correction (PFC) Welding Inductive Heating Advantages Easy assembly Space savings High power density
CoolMOS trademark Infineon Technology.
(0.062 in.) from case leads-to-tab, 50/60 minute Mounting torque
2500
Symbol
Test Conditions
Characteristic Values 25°C, unless otherwise specified) min. typ. max. 25°C 125°C ±200
RDS(on) VGS(th) IDSS IGSS
ID90, Note ID90, Note 125°C VGS, VDSS VDC,
2003 IXYS rights reserved
DS99099(10/03)
IXKG 25N80C
Symbol Test Conditions Characteristic Values 25°C, unless otherwise specified) min. typ. max. 640V 0.30
ISO264 OUTLINE
Qg(on) td(on) td(off) RthJC RthCH
Reverse Conduction Symbol Test Conditions 12.5 Note
Characteristic Values 25°C, unless otherwise specified) min. typ. max.
Gate Drain (Collector) Source (Emitter) Connection
Note: Pulse test, duty cycle
IXYS reserves right change limits, test conditions, dimensions.
IXYS MOSFETs IGBTs covered more 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 6,404,065B1 6,259,123B1 6,162,665
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