anAMPcompany Radar Pulsed Power Transistor, 65W, 1OOp Pulse, Duty
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Radar Pulsed Power Transistor, 65W, 1OOp Pulse, Duty PH3134-65M
Features
.650 (16.51)-
Silicon Microwave Power Transistor Common Base Configuration Broadband Class Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Output Impedance Matching HermeticMetaVCeramic Package
.225*.010 (5.72Z.25)
Absolute Maximum Ratings 25°C
.225t010 (5.72i.25) EMIlYER
167i.010
uNLE.ss OTHERWISE NOTED, TOLERANCES (nILLIMETERS 13nH,
INCHES
k.005'
Electrical Characteristics
25°C
Broadband Test Fixture impedances
F(GHz) Z,(Q)
3.10
3.25
11.2-j11.7 11.5-j9.5
12.7-j7.6
j5.3 j4.3
6.4-j3.3
3.40
Specifications Sublect Change Without Notlce.
Radar Pulsed Power Transistor,
PH3134-65M
v2.00
Test Fixture
GROUND
pucEs,
/=-=-I
B;i"^
BOARDS, ROGERS
2052-5636-02 PLACES
FZKR BRASS
LEi~`"`""
;$;RtW;T"R
MATSINK, ALUHINUN
BOARD iLiE:""
73050257-14 74250125-07
COPPER 73050256-04
73050255-22
73O!iEV-15
VIEW
Test Fixture Board Dimensions
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