Watts Volts, 100µs, Radar 1200 1400 1214-300 internally matched,
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1214
Watts Volts, 100µs, Radar 1200 1400
1214-300 internally matched, COMMON BASE transistor capable providing Watts pulsed output power hundred microseconds pulse width, percent duty factor across band 1200 1400 MHz. This hermetically solder-sealed transistor specifically designed L-Band radar applications. utilizes gold metalization diffused emitter ballasting provide high reliability supreme ruggedness.
CASE OUTLINE 55KT, STYLE
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation 25oC Maximum Voltage Current BVces Collector Emitter Voltage BVebo Emitter Base Voltage Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 1458 Watts
Volts Volts Amps
ELECTRICAL CHARACTERISTICS
SYMBOL Pout VSWR1 CHARACTERISTICS Power Note Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS 1200-1400 Volts Pulse Width Duty 1400MHz, =270W 42.7 UNITS Watts Watts
BVces BVebo
Collector Emitter Breakdown Emitter Base Breakdown Current Gain Thermal Resistance
Rated Pulse Condition
Volts Volts 0.25
Note Pulse condition 100µsec, 10%. Note Product Selected Watt minimum available, please contact factory details. Issue December, 1994
TECHNOLOGY INC. RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE. RECOMMENDS THAT BEFORE PRODUCT(S) DESCRIBED HEREIN WRITTEN INTO SPECIFICATIONS, USED CRITICAL APPLICATIONS, THAT PERFORMANCE CHARACTERISTICS VERIFIED CONTACTING FACTORY.
Technology Inc. 3000 Oakmead Village Drive, Santa Clara, 95051-0808 Tel. 986-8031 986-8120
1214-300
August 1996
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