LP7612P70 DESCRIPTION APPLICATIONS LP7612P70 packaged Aluminum Ga

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LP7612P70 DESCRIPTION APPLICATIONS LP7612P70 packaged Aluminum Ga

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PACKAGED HIGH DYNAMIC RANGE PHEMT FEATURES Output Power 1-dB Compression Power Gain Small Signal Gain Noise Figure
LP7612P70
DESCRIPTION APPLICATIONS LP7612P70 packaged Aluminum Gallium Arsenide Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing Electron-Beam direct-write 0.25 Schottky barrier gate. recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source gate resistances. epitaxial structure processing have been optimized high dynamic range. LP7612's active areas passivated with ceramic package ideal low-cost, high-performance applications that require surface-mount package. Typical applications include high dynamic range receiver preamplifiers commercial applications including Cellular/PCS systems, WLAN systems, other types high-gain applications radio link systems.
ELECTRICAL SPECIFICATIONS TAmbient 25°C*
Parameter Saturated Drain-Source Current** Power 1-dB Compression Power Gain 1-dB Compression Power-Added Efficiency Noise Figure Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Symbol IDSS P-1dB G-1dB IMAX IGSO |VBDGS| Test Conditions IDSS IDSS IDSS IDSS; -0.25 -0.8 -1.5 Units
Gate-Drain Breakdown |VBDGD| Voltage Magnitude *frequency=18 GHz, unless otherwise noted **Formerly binned LPD7612P70-1 40-65 LPD7612P70-2 66-85
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01 Email: sales@filss.com
PACKAGED HIGH DYNAMIC RANGE PHEMT ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Notes: Symbol TSTG PTOT Test Conditions TAmbient TAmbient TAmbient TAmbient TAmbient TAmbient TAmbient 2xIDSS Units
LP7612P70
Operating conditions that exceed Absolute Maximum Ratings could result permanent damage device. Power Dissipation defined PTOT (PDC PIN) POUT, where PDC: Bias Power PIN: Input Power POUT: Output Power Absolute Maximum Power Dissipation de-rated follows above 25°C: PTOT= 400mW (2.7 mW/°C) where heatsink ambient temperature.
This PHEMT susceptible damage from Electrostatic Discharge. Proper precautions should used when handling these devices.
HANDLING PRECAUTIONS avoid damage devices care should exercised during handling. Proper Electrostatic Discharge (ESD) precautions should observed stages storage, handling, assembly, testing. These devices should treated Class (0-500 Further information control measures found MIL-STD-1686 MIL-HDBK-263. APPLICATIONS NOTES DESIGN DATA Applications Notes available from your local Filtronic Sales Representative directly from factory. Complete design data, including S-parameters, noise data, large-signal models available Filtronic site.
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01 Email: sales@filss.com
PACKAGED HIGH DYNAMIC RANGE PHEMT PACKAGE OUTLINE
(dimensions mils)
LP7612P70
information specifications subject change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/20/01 Email: sales@filss.com

LP7612P70 DESCRIPTION APPLICATIONS LP7612P70 packaged Aluminum Ga

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