LP1500P100 DESCRIPTION APPLICATIONS LP1500P100 packaged Aluminum

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LP1500P100 DESCRIPTION APPLICATIONS LP1500P100 packaged Aluminum

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PACKAGED POWER PHEMT FEATURES Output Power 1-dB Compression Power Gain Output 15GHz Power-Added Efficiency
LP1500P100
DESCRIPTION APPLICATIONS LP1500P100 packaged Aluminum Gallium Arsenide Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). utilizes 0.25 1500 Schottky barrier gate, defined electron-beam photolithography. recessed "mushroom" gate structure minimizes parasitic gate-source gate resistance. epitaxial structure processing have been optimized reliable high-power applications. LP1500 also features Si3N4 passivation available form other packages. LP1500P100 designed medium-power, linear amplification. This device suitable applications commercial military environments, appropriate used medium power transistor SATCOM uplink transmitters, medium-haul digital radio transmitters, high efficiency amplifiers, systems.
ELECTRICAL SPECIFICATIONS TAmbient 25°C
Parameter Saturated Drain-Source Current Power 1-dB Compression Power Gain 1-dB Compression Power-Added Efficiency Output Third-Order Intercept Point Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude frequency=15 Symbol IDSS P-1dB G-1dB IMAX IGSO |VBDGS| |VBDGD| Test Conditions IDSS IDSS IDSS; IDSS; -0.25 29.5 -1.2 -2.0 Units
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01 Email: sales@filss.com
PACKAGED POWER PHEMT ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Notes: Symbol TSTG PTOT Test Conditions TAmbient TAmbient TAmbient TAmbient TAmbient TAmbient TAmbient 2xIDSS Units
LP1500P100
Operating conditions that exceed Absolute Maximum Ratings could result permanent damage device. Power Dissipation defined PTOT (PDC PIN) POUT, where PDC: Bias Power PIN: Input Power POUT: Output Power Absolute Maximum Power Dissipation de-rated follows above 25°C: PTOT= 3.0W (0.020W/°C) where heatsink ambient temperature.
This PHEMT susceptible damage from Electrostatic Discharge. Proper precautions should used when handling these devices.
HANDLING PRECAUTIONS avoid damage devices care should exercised during handling. Proper Electrostatic Discharge (ESD) precautions should observed stages storage, handling, assembly, testing. These devices should treated Class (0-500 Further information control measures found MIL-STD-1686 MIL-HDBK-263. APPLICATIONS NOTES DESIGN DATA Applications Notes available from your local Filtronic Sales Representative directly from factory. Complete design data, including S-parameters, noise data, large-signal models available Filtronic site.
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01 Email: sales@filss.com
PACKAGED POWER PHEMT PACKAGE OUTLINE
(dimensions mils)
LP1500P100
information specifications subject change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/20/01 Email: sales@filss.com

LP1500P100 DESCRIPTION APPLICATIONS LP1500P100 packaged Aluminum

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