High Frequency Transistor Array CA3127 consists five general purp
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CA3127
High Frequency Transistor Array
CA3127 consists five general purpose silicon transistors common monolithic substrate. Each completely isolated transistors exhibits noise value excess 1GHz, making CA3127 useful from 500MHz. Access provided each terminals individual transistors separate substrate connection been provided maximum application flexibility. monolithic construction CA3127 provides close electrical thermal matching five transistors.
Features
Gain Bandwidth Product (fT). >1GHz Power Gain 30dB (Typ) 100MHz Noise Figure 3.5dB (Typ) 100MHz Five Independent Transistors Common Substrate
Applications
Amplifiers Multifunction Combinations RF/Mixer/Oscillator Sense Amplifiers Synchronous Detectors Mixers
Ordering Information
PART NUMBER (BRAND) CA3127E TEMP. RANGE (oC) PKG. E16.3 M16.15
PACKAGE PDIP SOIC
Converter Amplifiers Synthesizers Cascade Amplifiers
CA3127M (3127) CA3127M96 (3127)
SOIC Tape Reel M16.15
Pinout
CA3127 (PDIP, SOIC) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
File Number
662.3
CA3127
Absolute Maximum Ratings
following ratings apply each transistor device Collector-to-Emitter Voltage, VCEO Collector-to-Base Voltage, VCBO Collector-to-Substrate Voltage, VCIO (Note Collector Current, 20mA
Thermal Information
Thermal Resistance (Typical, Note (oC/W) PDIP Package SOIC Package Maximum Power Dissipation, (Any Transistor). 85mW Maximum Junction Temperature (Die) 175oC Maximum Junction Temperature (Plastic Packages). 150oC Maximum Storage Temperature Range -65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC (SOIC Lead Tips Only)
Operating Conditions
Temperature Range -55oC 125oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTES: collector each transistor CA3127 isolated from substrate integral diode. substrate (Terminal must connected most negative point external circuit maintain isolation between transistors provide normal transistor action. measured with component mounted evaluation board free air.
Electrical Specifications
PARAMETER
25oC TEST CONDITIONS UNITS
CHARACTERISTICS (For Each Transistor) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown-Voltage Emitter-to-Base Breakdown Voltage (Note Collector-Cutoff-Current Collector-Cutoff-Current Forward-Current Transfer Ratio 10µA, 1mA, 10µA, 10µA, 10V, 0.1mA Base-to-Emitter Voltage 0.1mA Collector-to-Emitter Saturation Voltage Magnitude Difference Magnitude Difference DYNAMIC CHARACTERISTICS Noise Figure Gain-Bandwidth Product Collector-to-Base Capacitance Collector-to-Substrate Capacitance Emitter-to-Base Capacitance Voltage Gain Power Gain Noise Figure Input Resistance Output Resistance Input Capacitance Output Capacitance Magnitude Forward Transadmittance NOTE: When used zener reference voltage, device must subjected more than 0.1mJ energy from possible capacitance electrostatic discharge order prevent degradation junction. Maximum operating zener current should less than 10mA. 100kHz, 500, 1MHz 1MHz 1MHz 10MHz, Cascode Configuration 100MHz, 12V, Common-Emitter Configuration 1mA, 1.15 Fig. 10mA, Matched 0.71 0.66 0.60 0.81 0.76 0.70 0.26 0.91 0.86 0.80 0.50
CA3127 Test Circuits
BIAS-CURRENT
0.01
0.01µF 0.01 470pF 470pF
FIGURE VOLTAGE-GAIN TEST CIRCUIT USING CURRENT-MIRROR BIASING
SHIELD 1000pF 0.3µH 1.8pF (NOTE 1000 1000 +12V 1000 1000 TEST POINT (NOTE 0.47µH
NOTES: This circuit chosen because conveniently represents close approximation performance properly unilateralized single transistor this type. current-mirror configuration facilitates simplified biasing. cascode circuit implies that transistors cannot used individually. E.F. Johnson number 160-104-1 equivalent.
OHMITE Z144
FIGURE 100MHz POWER-GAIN NOISE-FIGURE TEST CIRCUIT
GENERAL RADIO 1021-P1 100MHz GENERATOR
ATTN
100MHz TEST
BOONTON VOLTMETER
12VDC POWER SUPPLY
FIGURE POWER GAIN SET-UP
NOISE SOURCE HEWLETT PACKARD HP343A
100MHz TEST
100MHz POST AMPLIFIER
NOISE FIGURE METER HEWLETT PACKARD HP342A
12VDC POWER SUPPLY
15VDC POWER SUPPLY
FIGURE NOISE FIGURE SET-UP FIGURE BLOCK DIAGRAMS POWER-GAIN NOISE-FIGURE TEST SET-UPS
CA3127 Typical Performance Curves
25oC RSOURCE 10Hz 25oC RSOURCE 10Hz 100Hz
NOISE FIGURE (dB)
NOISE FIGURE (dB)
100Hz
10kHz
1kHz
1kHz 10kHz 100kHz
100kHz 0.01 COLLECTOR CURRENT (mA) 0.01 COLLECTOR CURRENT (mA)
FIGURE NOISE FIGURE COLLECTOR CURRENT
FIGURE NOISE FIGURE COLLECTOR CURRENT
BASE-TO-EMITTER VOLTAGE
25oC GAIN-BANDWIDTH PRODUCT (GHz)
-55oC 125oC 25oC
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE GAIN-BANDWIDTH PRODUCT COLLECTOR CURRENT
FIGURE BASE-TO-EMITTER VOLTAGE COLLECTOR CURRENT
25oC 1MHz 2.25 2.00 CAPACITANCE (pF) 1.75 1.50 1.25 1.00 0.75 0.50 0.25
CAPACITANCE (pF)
TRANSISTOR
TOTAL TOTAL TOTAL TOTAL
BIAS
BIAS VOLTAGE
0.025 0.190 0.090 0.125 0.365 0.610 0.475 1.65 0.015 0.170 0.225 0.265 0.130 0.360 0.085 1.35 0.040 0.200 0.215 0.240 0.360 0.625 0.210 1.40 0.040 0.190 0.225 0.270 0.365 0.610 0.085 1.25 0.010 0.165 0.095 0.115 0.140 0.365 0.090 1.35
FIGURE CAPACITANCE BIAS VOLTAGE
FIGURE TYPICAL CAPACITANCE VALUES 1MHz. THREE TERMINAL MEASUREMENT. GUARD TERMINALS EXCEPT THOSE UNDER TEST.
CA3127 Typical Performance Curves
VOLTAGE GAIN (dB) FREQUENCY (MHz) 1000 0.2mA 0.5mA VOLTAGE GAIN (dB) 25oC, TEST CIRCUIT FIGURE
(Continued)
25oC, TEST CIRCUIT FIGURE FREQUENCY (MHz) 1000 0.5mA 0.2mA
FIGURE VOLTAGE GAIN FREQUENCY
FIGURE VOLTAGE GAIN FREQUENCY
FORWARD CURRENT TRANSFER RATIO
25oC INPUT CONDUCTANCE (g11) SUSCEPTANCE (b11) (mS)
25oC, FREQUENCY (MHz)
COLLECTOR CURRENT (mA)
1000
FIGURE FORWARD-CURRENT TRANSFER RATIO (hFE) COLLECTOR CURRENT
FIGURE INPUT ADMITTANCE (Y11) FREQUENCY
OUTPUT CONDUCTANCE (g22) (mS)
25oC 200MHz INPUT CONDUCTANCE (g11) SUSCEPTANCE (b11) (mS) COLLECTOR CURRENT (mA)
1000
FREQUENCY (MHz)
FIGURE INPUT ADMITTANCE (Y11) COLLECTOR CURRENT
FIGURE OUTPUT ADMITTANCE (Y22) FREQUENCY
OUTPUT SUSCEPTANCE (b22) (mS)
25oC
CA3127 Typical Performance Curves
25oC 200MHz 0.400 0.375 0.350 0.325 0.300 0.275 0.250 0.225 0.200 0.175
(Continued)
25oC MAGNITUDE FORWARD TRANSADMITTANCE (|Y21|) (mS) |Y21| 200MHz PHASE-ANGLE FORWARD TRANSADMITTANCE (|21|) (DEGREES) PHASE-ANGLE REVERSE TRANSADMITTANCE (|12|) (DEGREES)
OUTPUT CONDUCTANCE (g22) (mS)
OUTPUT SUSCEPTANCE (b22) (mS)
COLLECTOR CURRENT (mA)
-100 COLLECTOR CURRENT (mA)
FIGURE OUTPUT ADMITTANCE (Y22) COLLECTOR CURRENT
FIGURE FORWARD TRANSADMITTANCE (Y21) COLLECTOR CURRENT
25oC MAGNITUDE FORWARD TRANSADMITTANCE (|Y21|) (mS)
PHASE-ANGLE FORWARD TRANSADMITTANCE (|21|) (DEGREES)
MAGNITUDE REVERSE TRANSADMITTANCE (|Y12|) (mS)
25oC 200MHz
-100 -110 -120 -130 -140
|Y21|
|Y12| 0.21
FREQUENCY (MHz)
-100 1000
-150 COLLECTOR CURRENT (mA)
FIGURE FORWARD TRANSADMITTANCE (Y21) FREQUENCY
FIGURE REVERSE TRANSADMITTANCE (Y12) COLLECTOR CURRENT
MAGNITUDE REVERSE TRANSADMITTANCE (|Y12|) (mS)
|Y12|
-100 -105 -110 -115 -120 1000
FREQUENCY (MHz)
FIGURE REVERSE TRANSADMITTANCE (Y12) FREQUENCY
PHASE-ANGLE REVERSE TRANSADMITTANCE (|12|) (DEGREES)
25oC
CA3127
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