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Small Signal Gain Minimum P1dB Operation High Breakdown Voltage High T


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CRF-27010-102
Small Signal Gain Minimum P1dB Operation High Breakdown Voltage High Temperature Operation 2.4-2.7 Operation High Efficiency
Applications
Class Amplifiers MMDS
Description
Cree' CRF-27010 silicon carbide (SiC) power Metal-Semiconducs Field-Effect Transistor (MESFET) prematched 2.4-2.7 Multichannel Multipoint Distribution System (MMDS) band. superior properties compared silicon gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity. MESFETs offer greater power density increased reliability compared GaAs transistors.
Absolute Maximum Ratings (not simultaneous) 25°C Case Temperature
Parameter Symbol VDSS TSTG Rating -25, 62.5 -40, Units °C/W
Drain-Source Voltage Gate-Source Voltage
Total Device Dissipation
Storage Temperature
Operating Junction Temperature
Thermal Resistance, Junction Case Soldering Temperature
Cree, Inc. 2000 June 2000
Specifications subject change without notice http://www.cree.com/
CASE STYLE CRF-27010-102 Angled lead Gate Non-angled lead Drain Case/Flange Source
Prematched 2.4-2.7 MMDS Power MESFET
CRF-27010-102
Characteristic CHARACTERISTICS
Gate Threshold Voltage Gate Quiescent Voltage Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Forward Transconductance Case Operating Temperature Screw Torque (101 Style Package)
Symbol
VGS(th) VGS(Q) IDSS
V(BR)DSS
CHARACTERISTICS
Gain
Power Output Compression
P1dB
Drain Efficiency
Intermodulation Distortion
IMD3
Notes:
Drain Efficiency POUT/PDC
Power Added Efficiency (PAE) (POUT PIN)/PDC
Cree, Inc. 2000
Specifications subject change without notice http://www.cree.com/
Units Conditions
0.160 0.33 0.37 2600 2600 2600 MHz, POUT P1dB 2600 MHz, 2606 MHz, POUT
Electrical Characteristics 25°C)

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