VOLTAGE CMOS SRAM Document Title VOLTAGE CMOS SRAM Revision Histo

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VOLTAGE CMOS SRAM Document Title VOLTAGE CMOS SRAM Revision Histo

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A62S6316 Series
VOLTAGE CMOS SRAM
Document Title VOLTAGE CMOS SRAM Revision History
History
Initial issue Change access times from 70/100 55/70 ns(max.) Change dynamic operating current from 80/70mA 40mA Modify TSOP (Type package outline drawing
Issue Date
October 1998 February 1999
Remark
Preliminary
Modify truth table Change dynamic operating current from 40mA 50mA(max.) Modify TSOP (Type package outline drawing Dimensions mini package outline dimensions symbol min. max. Final version release
June 1999 June 1999 November 1999 August 2002 July 2003 Final
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
VOLTAGE CMOS SRAM
Features
Operating voltage: 2.7V 3.3V Access times: 55/70 (max.) Current: A62S6316-S series: Operating: Standby: A62S6316-SI series: Operating: Standby: Extended operating temperature range -25°C 85°C series Full static operation, clock refreshing required inputs outputs directly TTL-compatible Common using three-state output Data retention voltage: (min.) Available 44-pin TSOP 48-ball Mini (6X8) packages.
50mA (max.) 15µA (max.) 50mA (max.) 30µA (max.)
General Description
A62S6316 operating current 1,048,576-bit static random access memory organized 65,536 words bits operates power supply voltage from 2.7V 3.3V. built using AMIC's high performance CMOS process. Inputs three-state outputs compatible allow direct interfacing with common system structures. chip enable input provided POWER-DOWN, device enable. byte enable inputs output enable input included easy interfacing. Data retention guaranteed power supply voltage
Configuration
TSOP (Type Mini (6X8) View
I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 I/O9 I/O8
I/O0 I/O2 I/O6 I/O7
I/O8 I/O9 I/O14 I/O15
I/O10 I/O11 I/O12 I/O13
I/O1 I/O3 I/O4 I/O5
(July, 2003, Version 1.0)
A62S6316V
A62S6316G
AMIC Technology, Corp.
A62S6316 Series
Block Diagram
2048 DECODER
MEMORY ARRAY
I/O0 COLUMN INPUT DATA CIRCUIT
I/O8
INPUT DATA CIRCUIT
I/O7
I/O15
CONTROL CIRCUIT
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Description TSOP
27,42 Symbol I/O0 I/O15 Description Address Inputs Chip Enable Input
Data Input/Outputs Write Enable Input Byte Enable Input (I/O0 I/O7) Byte Enable Input (I/O8 I/O15) Output Enable Input Power Ground Connection
Recommended Operating Conditions
70°C -25°C 85°C) Symbol Parameter Supply Voltage Ground Input High Voltage Input Voltage Output Load Output Load Min. -0.3 Typ. Max. +0.6 Unit
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Absolute Maximum Ratings*
-0.5V +4.6V IN/OUT Volt -0.5V 0.5V Operating Temperature, Topr -25°C +85°C Storage Temperature, Tstg -55°C +125°C Power Dissipation, 0.7W Soldering Temp. Time 260°C,
*Comments
Stresses above those listed under "Absolute Maximum Ratings" cause permanent damage this device. These stress ratings only. Functional operation this device these other conditions above those indicated operational sections this specification implied intended. Exposure absolute maximum rating conditions extended periods affect device reliability.
Electrical Characteristics 70°C -25°C 85°C, 2.7V 3.3V,
Symbol Parameter A62S6316-55S/70S Min. Input Leakage Current Output Leakage Current Max. A62S6316-55SI/70SI Min. Max. VI/O VIL, II/O Min. Cycle, Duty 100% VIL, II/O VIL, VCC, 1MHz, II/O 0.2V 2.1mA -1.0mA Unit Conditions
ICC1
Active Power Supply Current
ICC2
Dynamic Operating Current
ISB1 Standby Power Supply Current Output Voltage Output High Voltage
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Truth Table
High selected High selected ICC1, ICC2, ISB1, I/O0 I/O7 Mode selected Read Read High Write Write Write/Hi High I/O8 I/O15 Mode selected Read High Read Write Write/Hi Write High Current ISB1, ICC1, ICC2, ICC1, ICC2, ICC1, ICC2, ICC1, ICC2, ICC1, ICC2, ICC1, ICC2, ICC1, ICC2,
Note:
Capacitance 25°C, 1.0MHz)
Symbol CIN* CI/O* Parameter Input Capacitance Input/Output Capacitance Min. Max. Unit Conditions VI/O
These parameters sampled 100% tested.
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Characteristics +70°C -25°C 85°C, 2.7V 3.3V)
Symbol Parameter A62S6316-55S/SI Min. Read Cycle tACE tCLZ tBLZ tOLZ tCHZ tBHZ tOHZ Write Cycle tWHZ Write Cycle Time Chip Enable Write Byte Enable Write Address Setup Time Address Valid Write Write Pulse Width Write Recovery Time Write Output High Data Write Time Overlap Data Hold from Write Time Output Active from Write Read Cycle Time Address Access Time Chip Enable Access Time Byte Enable Access Time Output Enable Output Valid Chip Enable Output Byte Enable Output Output Enable Output Chip Disable Output High Byte Disable Output High Output Disable Output High Output Hold from Address Change Max. A62S6316-70S/SI Min. Max. Unit
Note: tCHZ, tBHZ tOHZ tWHZ defined time which outputs achieve open circuit condition referred output voltage levels.
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Timing Waveforms
Read Cycle
Address
DOUT
Read Cycle
Address
tACE tCLZ
tCHZ
tBLZ
tBHZ
tOHZ
tOLZ DOUT
Notes:
high Read Cycle. Device continuously enabled VIL, and, VIL. Address valid prior coincident with and, transition low. VIL. Transition measured ±500mV from steady state. This parameter sampled 100% tested.
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Timing Waveforms (continued)
Write Cycle (Write Enable Controlled)
Address tWR3
tAS1
tWP2
DATA tWHZ
DATA
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Timing Waveforms (continued)
Write Cycle (Chip Enable Controlled)
Address tAS1 tCW2 tWR3
DATA tWHZ
DATA
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Timing Waveforms (continued)
Write Cycle (Byte Enable Controlled)
Address
tWR3
tAS1
tBW2
DATA tWHZ DATA
Notes: measured from address valid beginning Write. Write occurs during overlap (tWP, tBW) and, measured from earliest and, going high Write cycle. level high low. Transition measured ±500mV from steady state. This parameter sampled 100% tested.
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Test Conditions
Input Pulse Levels Input Rise Fall Time Input Output Timing Reference Levels Output Load 2.4V 1.5V Figures
30pF
Including scope jig.
Including scope jig.
Figure Output Load
Figure Output Load tCLZ, tOLZ, tCHZ, tOHZ, tWHZ,
Data Retention Characteristics 70°C -25°C 85°C)
Symbol Parameter Data Retention Min. Max. Unit Conditions 0.2V 2.0V, 0.2V
ICCDR Data Retention Current
S-Version SI-Version
20**
tCDR
Chip Disable Data Retention Time Operation Recovery Time Rise Time from Data Retention Voltage Operating Voltage ICCDR: max. ICCDR: max.
Retention Waveform
A62S6316-55S/70S A62S6316-55SI/70SI
40°C 40°C
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Data Retention Waveform
DATA RETENTION MODE 2.7V tCDR 0.2V 2.7V
Ordering Information
Part A62S6316V-55S A62S6316V-55SI A62S6316G-55S A62S6316G-55SI A62S6316V-70S A62S6316V-70SI A62S6316G-70S A62S6316G-70SI Mini Mini Mini Mini TSOP TSOP Access Time (ns) Operating Current Max. (mA) Standby Current Max. (µA) Package TSOP TSOP
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Package Information TSOP (Type Outline Dimensions
unit: inches/mm
Dimensions inches
Dimensions 0.05 0.95 0.30 0.12 18.28 11.56 10.03 0.49 1.00 18.41 0.805 11.76 10.16 0.59 0.80 0.80 1.20 0.15 1.05 0.45 0.21 18.54 11.96 10.29 0.69
Symbol
0.002 0.037 0.012 0.005 0.720 0.455 0.395 0.019
0.039 0.725 0.032 0.463 0.400 0.023 0.031 0.031
0.047 0.006 0.041 0.018 0.008 0.730 0.471 0.405 0.027
0.004
0.10
Notes: maximum value dimension includes flash. Dimension does include resin fins. Dimension includes flash.
(July, 2003, Version 1.0)
AMIC Technology, Corp.
A62S6316 Series
Package Information Mini BALLS) Outline Dimensions
unit millimeter(mm)
Bottom View Index Index
View
Diameter Solder Ball
Symbol
5.90 7.90 0.30 1.00 0.17
0.75 6.00 3.75 8.00 5.25 0.35 1.10 0.36 0.22
6.10 8.10 0.40 1.20 0.27
(July, 2003, Version 1.0)
AMIC Technology, Corp.
0.10

VOLTAGE CMOS SRAM Document Title VOLTAGE CMOS SRAM Revision Histo

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