QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION ALD1

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QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION ALD1

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ALD1107/ALD1117
QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
GENERAL DESCRIPTION ALD1107/ALD1117 monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended broad range precision analog applications. ALD1107/ALD1117 offer high input impedance negative current temperature coefficient. transistor pairs matched minimum offset voltage differential thermal response, they designed precision analog switching amplifying applications +12V systems where input bias current, input capacitance fast switching speed desired. These MOSFET devices feature very large (almost infinite) current gain frequency, near operating environment. ALD1107/ALD1117 builiding blocks differential amplifier input stages, transmission gates, multiplexer applications, current sources, current mirrors other precision analog circuits. FEATURES threshold voltage -0.7 input capacitance typical High input impedance 1014 typical input output leakage currents Negative current (IDS) temperature coefficient Enhancement-mode (normally off) current gain input output leakage currents
APPLICATIONS Precision current sources Precision current mirrors Voltage Choppers Differential amplifier input stage Voltage comparator Data converters Sample Hold Precision analog signal processing
CONFIGURATION
ALD1117 PACKAGE
ALD1107 PACKAGE
ORDERING INFORMATION
-55°C +125°C 8-Pin CERDIP Package ALD1117 14-Pin CERDIP Package ALD1107 Operating Temperature Range* +70°C +70°C 8-Pin Plastic Package ALD1117PA 14-Pin Plastic Package ALD1107 8-Pin SOIC Package ALD1117 14-Pin SOIC Package ALD1107
Contact factory industrial temperature range.
BLOCK DIAGRAM
ALD1107
(14)
BLOCK DIAGRAM
ALD1117
(10)
(13)
(11)
(12)
(11)
1998 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, Gate-source voltage, Power dissipation Operating temperature range Storage temperature range Lead temperature, seconds -13.2V -13.2V +70°C -55°C +125°C -65°C +150°C +260°C
package package
OPERATING ELECTRICAL CHARACTERISTICS 25°C unless otherwise specified
ALD1107 Parameter Gate Threshold Voltage Offset Voltage VGS1-VGS2 Gate Threshold Temperature Drift Drain Current
Transconductance
ALD1117 -1.0 -0.4 -0.7 -1.0 Unit
Test Conditions -1.0µA
Symbol
-0.4
-0.7
-10µA
TCVT
-1.3
-1.3
mV/°C
(ON)
-1.3
-1.3
0.25
0.67
0.25
0.67
mmho -10mA µmho -10mA
Mismatch Output Conductance Drain Source Resistance Drain Source Resistance Mismatch Drain Source Breakdown Voltage Drain Current Gate Leakage Current Input Capacitance Notes:
(ON)
1200
1800
1200
1800
-0.1V
(ON)
-0.1V
BVDSS
-1.0µA
(OFF)
-12V 125°C -12V 125°C
IGSS CISS
Consists junction leakage currents Sample tested parameters
ALD1107/ALD1117
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (mA)
25°C -12V -10V -2.5 DRAIN SOURCE VOLTAGE
VOLTAGE OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (µA)
-7.5
25°C
-12V
-5.0
-250
-500 -320 -160
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE DRAIN SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE (mmho) 0.05 0.02 0.01 +25°C -1mA +125°C
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
DRAIN SOURCE CURRENT (µA)
1KHz
-5mA
25°C -0.8 -1.6 -2.4 -3.2 -4.0
DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE (ON) GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE
0.4V +125°C
DRAIN CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT (pA)
1000 -12V
+25°C
+100 +125
GATE SOURCE VOLTAGE
AMBIENT TEMPERATURE (°C)
ALD1107/ALD1117
Advanced Linear Devices
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
ALD1107 ALD1117
CURRENT SOURCE WITH GATE CONTROL
ALD1107 ALD1117
ISET
RSET SOURCE
ISET Digital Logic Control Current Source ALD1106 ALD1116 RSET ISOURCE
ALD1106 ALD1116 Channel MOSFET Channel MOSFET
SOURCE ISET RSET RSET
Channel MOSFET Q3,Q4 Channel MOSFET
DIFFERENTIAL AMPLIFIER
ALD1107 ALD1117
CURRENT SOURCE MULTIPLICATION
PMOS PAIR VOUT VIN+ NMOS PAIR
ISET
RSET ISOURCE ISET
QSET
VIN-
ALD1106 ALD1116
Current Source
Channel MOSFET Channel MOSFET
QSET, Q1.QN: ALD1106 ALD1116 Channel MOSFET
ALD1107/ALD1117
Advanced Linear Devices
TYPICAL APPLICATIONS
BASIC CURRENT SOURCES CHANNEL CURRENT SOURCE
ISET ISOURCE RSET
CHANNEL CURRENT SOURCE
ALD1107 ALD1117 SOURCE ISET RSET
ALD1106 ALD1116
ISOURCE ISET
RSET
RSET
RSET
Channel MOSFET
Channel MOSFET
CASCODE CURRENT SOURCES
ALD1107
ISET ISOURCE
RSET
ISET RSET ISOURCE
ALD1106
RSET RSET
ISOURCE ISET
Channel MOSFET (ALD1101 ALD1103)
Channel MOSFET (ALD1102 ALD1103)
ALD1107/ALD1117
Advanced Linear Devices

QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION ALD1

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