QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION ALD1

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QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION ALD1

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ALD1106/ALD1116
QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY
GENERAL DESCRIPTION ALD1106/ALD1116 monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended broad range precision analog applications. ALD1106/ALD1116 offer high input impedance negative current temperature coefficient. transistor pairs matched minimum offset voltage differential thermal response, they designed switching amplifying applications +12V systems where input bias current, input capacitance fast switching speed desired. These MOSFET devices feature very large (almost infinite) current gain frequency, near operating environment. ALD1106/ALD1116 building blocks differential amplifier input stages, transmission gates, multiplexer applications, current sources many precision analog circuits.
APPLICATIONS Precision current mirrors Precision current sources Voltage choppers Differential amplifier input stage Voltage comparator Data converters Sample Hold Analog signal processing
CONFIGURATION
ALD1116 PACKAGE
FEATURES threshold voltage 0.7V input capacitance typical High input impedance 1014 typical Negative current temperature coefficient Enhancement-mode (normally off) current gain input output leakage currents ORDERING INFORMATION
Operating Temperature Range* -55°C +125°C +70°C +70°C 8-Pin CERDIP Package ALD1116 14-Pin CERDIP Package ALD1106 8-Pin Plastic Package ALD1116 14-Pin Plastic Package ALD1106 8-Pin SOIC Package ALD1116 14-Pin SOIC Package ALD1106
ALD1106 VDN4 PACKAGE
Contact factory industrial temperature range.
BLOCK DIAGRAM
ALD1106
(11) (14)
BLOCK DIAGRAM
ALD1116
(10)
(13)
(12)
1998 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, Gate-source voltage, Power dissipation Operating temperature range Storage temperature range Lead temperature, seconds 13.2V 13.2V +70°C -55°C +125°C -65°C +150°C +260°C
package package
OPERATING ELECTRICAL CHARACTERISTICS 25°C unless otherwise specified
ALD1106 Parameter Gate Threshold Voltage Offset Voltage VGS1-VGS2 Gate Threshold Temperature Drift Drain Current
Transconductance
ALD1116 Unit
Test Conditions 1.0µA
Symbol
10µA
TCVT
-1.2
-1.2
mV/°C
(ON)
mmho IDS= 10mA µmho 10mA
Mismatch Output Conductance
Drain Source (ON) Resistance Drain Source Resistence Mismatch Drain Source Breakdown Voltage Drain Current Gate Leakage Current Input Capacitance Notes:
0.1V
(ON)
0.1V
BVDSS (OFF)
1.0µA =12V 125°C 125°C
IGSS CISS
Consists junction leakage currents Sample tested parameters
ALD1106/ALD1116
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
1000
VOLTAGE OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (µA)
25°C
DRAIN SOURCE CURRENT (mA)
25°C
-500
-1000 -160
DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE DRAIN SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE (mmho)
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
+125°C 1KHz +25°C
10mA
DRAIN SOURCE CURRENT (µA)
25°C -10V -12V
DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE (ON) GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE
DRAIN CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT (pA) 1000 +12V
0.2V
+125°C
+25°C
+100 +125
GATE SOURCE VOLTAGE
AMBIENT TEMPERATURE (°C)
ALD1106/ALD1116
Advanced Linear Devices
ALD1106/ALD1116
Advanced Linear Devices

QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION ALD1

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