DUAL N-CHANNEL DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIP

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DUAL N-CHANNEL DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIP

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ALD1103
DUAL N-CHANNEL DUAL P-CHANNEL MATCHED MOSFET PAIR
GENERAL DESCRIPTION ALD1103 monolithic dual N-channel dual P-channel matched transistor pair intended broad range analog applications. These enhancement-mode transistors manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. consists ALD1101 N-channel MOSFET pair ALD1102 P-channel MOSFET pair package. ALD1103 offers high input impedance negative current temperature coefficient. transistor pair matched minimum offset voltage differential thermal response, designed precision signal switching amplifying applications +12V systems where input bias current, input capacitance fast switching speed desired. Since these MOSFET devices, they feature very large (almost infinite) current gain frequency, near operating environment. When used pairs, dual CMOS analog switch constructed. addition, ALD1103 intended building block differential amplifier input stages, transmission gates, multiplexer applications. ALD1103 suitable precision applications which require very high current gain, beta, such current mirrors current sources. high input impedance high current gain Field Effect Transistors result extremely current loss through control gate. current gain limited gate input leakage current, which specified 50pA room temperature. example, beta device drain current 25°C 5mA/50pA 100,000,000. FEATURES Thermal tracking between N-channel P-channel pairs threshold voltage 0.7V both N-channel P-channel MOSFETS input capacitance 10mV High input impedance 1013 typical input output leakage currents Negative current (IDS) temperature coefficient Enhancement mode (normally off) current gain Matched N-channel matched P-channel package
APPLICATIONS Precision current mirrors Complementary push-pull linear drives Analog switches Choppers Differential amplifier input stage Voltage comparator Data converters Sample Hold Analog inverter Precision matched current sources
CONFIGURATION
VDP1 PACKAGE
BLOCK DIAGRAM
GATE
DRAIN
SOURCE SUBSTRATE
DRAIN (14)
SOURCE (12)
GATE (13)
ORDERING INFORMATION
-55°C +125°C 14-Pin CERDIP Package ALD1103 Operating Temperature Range* +70°C +70°C 14-Pin Plastic Package ALD1103 14-Pin SOIC Package ALD1103
GATE
DRAIN
SOURCE SUBSTRATE (11)
DRAIN (10)
SOURCE
Contact factory industrial temperature range.
GATE
1998 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, Gate-source voltage, Power dissipation Operating temperature range Storage temperature range Lead temperature, seconds 13.2V 13.2V +70°C -55°C +125°C -65°C +150°C +260°C
package package
OPERATING ELECTRICAL CHARACTERISTICS 25°C unless otherwise specified
Channel Parameter Symbol Gate Threshold Voltage Offset Voltage VGS1 VGS2 Unit Test Conditions 10µA 100µA Channel -0.4 -0.7 -1.2 Unit Test Conditions -10µA -100µA
Gate Threshold Temperature TCVT Drift Drain Current Trans-. conductance Mismatch Output Conductance Drain Source Resistance (ON) RDS(ON)
-1.2
mV/°C
-1.3
mV/°C
IDS= 10mA
IDS= -10mA
mmho
mmho
µmho 10mA 0.1V
µmho -10mA -0.1V
Drain Source Resistance RDS(ON) Mismatch Drain Source Breakdown Voltage Drain Current Gate Leakage Current Input Capacitance
0.1V
-0.1V
BVDSS IDS(OFF) IGSS CISS
10µA =12V 125°C =12V 125°C
-10µA -12V 125°C =-12V 125°C
ALD1103
Advanced Linear Devices
CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (mA)
25°C -12V -10V DRAIN SOURCE VOLTAGE
VOLTAGE OUTPUT CHARACTERISTICS
DRAIN-SOURCE CURRENT (mA) 25°C -12V
-320
-160
DRAIN -SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE DRAIN SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE (µmho)
10000 5000 2000 1000 +25°C -1mA +125°C
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
DRAIN-SOURCE CURRENT (µA)
1KHz
-5mA
25°C -0.8 -1.6 -2.4 -3.2 -4.0
DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
(ON) GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE DRAIN SOURCE CURRENT
10000 0.4V 1000 +125°C
-10X10-6
DRAIN CURRENT TEMPERATURE
-12V
-10X10-9
+25°C
-10X10-12 +100 +125
GATE SOURCE VOLTAGE
TEMPERATURE (°C)
ALD1103
Advanced Linear Devices
CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
DRAIN -SOURCE CURRENT (mA)
VOLTAGE OUTPUT CHARACTERISTICS
DRAIN-SOURCE CURRENT (mA)
25°C
25°C
DRAIN-SOURCE VOLTAGE
-160
DRAIN -SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE (µmho)
x105 x104 x104
FORWARD TRANSCONDUCTANCE DRAIN-SOURCE VOLTAGE
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
DRAIN-SOURCE CURRENT (µA)
25°C -10V -12V
1KHz +125°C +25°C
10mA
x104 x103 x103 x103
DRAIN -SOURCE VOLTAGE
GATE SOURCE VOLTAGE
(ON) GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE
DRAIN SOURCE CURRENT
10000 0.2V 1000 +125°C
10X10-6
DRAIN CURRENT TEMPERATURE
+12V
10X10-9
+25°C
10X10-12 +100 +125
GATE SOURCE VOLTAGE
TEMPERATURE (°C)
ALD1103
Advanced Linear Devices
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
ALD1103
ISET
RSET
ISET
SOURCE
RSET
ISOURCE
Digital Logic Control Current Source ALD1103 Channel MOSFET Q3,Q4 Channel MOSFET
ALD1103 Channel MOSFET Channel MOSFET
SOURCE ISET RSET RSET
DIFFERENTIAL AMPLIFIER
CURRENT SOURCE MULTIPLICATION
PMOS PAIR VOUT
ISET
RSET ISOURCE ISET
VIN+
NMOS PAIR
QSET
VIN-
ALD1103
Current Source
Channel MOSFET Channel MOSFET
QSET, Q1.QN: 1101 1103 Channel MOSFET
ALD1103
Advanced Linear Devices
TYPICAL APPLICATIONS
BASIC CURRENT SOURCES CHANNEL CURRENT SOURCE
ISET ISOURCE RSET
CHANNEL CURRENT SOURCE
ALD1103 SOURCE ISET RSET
ALD1103
ISOURCE ISET
RSET
RSET
RSET
Channel MOSFET
Channel MOSFET
CASCODE CURRENT SOURCES
ISET ISOURCE
RSET
ISET RSET ISOURCE
ISOURCE ISET
RSET
RSET
Channel MOSFET (ALD1101 ALD1103)
Channel MOSFET (ALD1102 ALD1103)
ALD1103
Advanced Linear Devices

DUAL N-CHANNEL DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIP

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