AO4411 uses advanced trench technology provide excellent RDS(ON), ultr
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AO4411 P-Channel Enhancement Mode Field Effect Transistor
AO4411 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge. This device suitable load switch applications.
Features
-30V RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -6.6
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4411
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-8A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-8A TJ=125°C -1.2 24.5 14.5 -0.76 -4.2 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 18.4 VGS=-10V, VDS=-15V, ID=-8A 18.9 21.5 12.5 ±100 -2.4 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge tD(on) tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=1.8, RGEN=3
IF=-8A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
Alpha Omega Semiconductor, Ltd.
AO4411 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V VGS=-3V -VDS (Volts) On-Region Characteristics VGS=-4.5V Normalized On-Resistance RDS(ON) Figure On-Resistance Drain Current Gate Voltage RDS(ON) -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C 1.0E-04 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C 125°C ID=-7.5A VGS=-10V 1.40 1.60 ID=-7.5A VGS=-10V -VGS(Volts) Figure Transfer Characteristics -3.5V -4.5V -ID(A) 125°C 25°C VDS=-5V
1.20
VGS=-4.5V
1.00
0.80 Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 125°C
Alpha Omega Semiconductor, Ltd.
AO4411 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-15V ID=-8A Capacitance (pF) 1500 1250 1000 Coss -VDS (Volts) Figure Capacitance Characteristics Crss
Ciss
100.0
TJ(Max)=150°C, TA=25°C
10µs 100µs Power TJ(Max)=150°C TA=25°C
(Amps)
10.0
RDS(ON) limited 0.1s
10ms
-VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001
0.0001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
0.001
0.01
1000
Alpha Omega Semiconductor, Ltd.
ALPHA OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS MILLIMETERS SYMBOLS
DIMENSIONS INCHES
1.45 0.00 0.33 0.19 4.80 3.80 5.80 0.25 0.40
1.50 1.45 1.27
1.55 0.10 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10
0.057 0.000 0.013 0.007 0.189 0.150 0.228 0.010 0.016
0.059 0.057 0.050
0.061 0.004 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004
NOTE: LEAD FINISH: MICROINCHES MIN. THICKNESS Tin/Lead (SOLDER) PLATED LEAD TOLERANCE 0.10 mil) UNLESS OTHERWISE SPECIFIED COPLANARITY 0.10 DIMENSION MEASURED GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LOGO LOGO 4411 PART NUMBER CODE. LOCATION ASSEMBLY LOCATION YEAR CODE WEEK CODE. ASSEMBLY CODE
SO-8 PART CODE
UNIT:
PART AO4411
CODE 4411
Rev.
ALPHA OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape Reel Data
SO-8 Reel
SO-8 Tape
Leader Trailer Orientation
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