AOD412 uses advanced trench technology provide excellent RDS(ON), gate
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AOD412 N-Channel Enhancement Mode Field Effect Transistor
AOD412 uses advanced trench technology provide excellent RDS(ON), gate chargeand gate resistance. This device ideally suited high side switch core power conversion.
Features
RDS(ON) 7.0m (VGS 10V) RDS(ON) 10.5m (VGS 4.5V)
TO-252 D-PAK View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation Power Dissipation
Maximum
Units
TC=25°C
TC=100°C
PDSM TSTG
TC=100°C TA=25°C TA=70°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
14.2
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOD412
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C 8.25 0.72 10.5 1320 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.95 VGS=4.5V, VDS=15V, ID=20A 13.3 12.5 29.7 22.3 2.15 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.75, RGEN=3
IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. Power dissipation PDSM based steady-state maximum allowed junction temperature 150°C. value given application depends user's specific board design, maximum temperature 175°C used heatsink allows power dissipation based TJ(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit. Repetitive rating, pulse width limited junction temperature J(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. maximum current rating limited package current capability.
Alpha Omega Semiconductor, Ltd.
AOD412
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) Figure On-Resistance Drain Current Gate Voltage 1.0E+02 1.0E+01 RDS(ON) ID=20A 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25°C (Volts) Figure On-Resistance Gate-Source Voltage 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics 25°C 125°C VGS=10V VGS=4.5V VGS=4.5V Temperature (°C) Figure On-Resistance Junction Temperature ID=20A VGS=10V VGS=3V ID(A) 4.0V 125°C 3.5V 25°C VGS(Volts) Figure Transfer Characteristics VDS=5V
125°C
Alpha Omega Semiconductor, Ltd.
AOD412
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 2400 VDS=15V ID=20A Capacitance (pF) 2000 1600 1200 (Volts) Figure Capacitance Characteristics Crss Coss
Ciss
1000 RDS(ON) limited 10ms 0.1s TJ(Max)=150°C TA=25°C 10µs 100µs Power
0.01
(Amps)
TJ(Max)=150°C TA=25°C
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOD412
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current Power Dissipation 0.001 0.01 0.00001 TA=25°C 0.0001 TCASE (°C) Figure Power De-rating (Note
Time avalanche, Figure Single Pulse Avalanche capability
Current rating ID(A) TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.
ALPHA OMEGA
SEMICONDUCTOR, INC.
DPAK Package Data
(JEDEC TO-252)
DIMENSION MILLIMETERS MIN.
DIMENSIONS INCHES MIN. 0.088 0.000 0.035 0.027 0.035 0.205 0.018 0.019 0.235 0.170 0.255 0.170 NOM. 0.090 -0.030 -0.020 -0.240 -0.260 -0.090 BSC. 0.180 BSC. MAX. 0.094 0.004 0.045 0.035 0.045 0.215 0.022 0.023 0.245 0.210 0.265
NOM. 2.286 -0.762 -4.45 0.508 -6.096 -6.604 -2.286 BSC. 4.572 BSC.
MAX. 2.388 0.102 1.143 0.889 1.143 5.461 0.559 0.584 6.223 5.334 6.731
2.235 0.000 0.889 0.686 0.889 5.207 0.457 0.483 5.969 4.318 6.477 4.318
9.779 1.270 0.635 0.889
10.414 2.032 1.016 1.270
0.385 0.050 0.025 0.035
0.410 0.080 0.040 0.050
DETAIL
NOTE PACKAGE BODY SIZES EXCLUDE MOLD FLASH GATE BURRS DIMENSION MEASURED GAGE PLANE TOLERANCE 0.10 UNLESS OTHERWISE SPECIFIED CONTROLLING DIMENSION MILLIMETER. CONVERTED INCH DIMENSIONS NECESSARILY EXACT. FOLLOWED FROM JEDEC TO-252 (AA)
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE:
D412 FAYWLC
D412
LOGO PART NUMBER CODE. LOCATION ASSEMBLY LOCATION YEAR CODE WEEK CODE. ASSEMBLY CODE
DPAK PART CODE
PART AOD412
CODE D412
UNIT:
Rev.
ALPHA OMEGA
SEMICONDUCTOR, INC.
TO-252 (DPAK) Carrier Tape
TO-252 (DPAK) Tape Reel Data
TO-252 (DPAK) Reel
TO-252 (DPAK) Leader Trailer Orientation
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