AO4430 uses advanced trench technology provide excellent RDS(ON), shoo

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AO4430 uses advanced trench technology provide excellent RDS(ON), shoo

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AO4430 N-Channel Enhancement Mode Field Effect Transistor
AO4430 uses advanced trench technology provide excellent RDS(ON), shoot-through immunity, body diode characteristics ultra-low gate resistance. This device ideally suited side switch Notebook core power conversion.
Features
RDS(ON) 5.5m (VGS 10V) RDS(ON) 7.5m (VGS 4.5V)
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4430
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=18A TJ=125°C 6060 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.45 VGS=10V, VDS=15V, ID=18A 51.5 33.5 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.83, RGEN=3
IF=18A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating.
Alpha Omega Semiconductor, Ltd.
AO4430
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) Figure On-Resistance Drain Current Gate Voltage 1.0E+02 1.0E+01 RDS(ON) ID=18A 125°C 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 (Volts) Figure On-Resistance Gate-Source Voltage 1.0E-05 (Volts) Figure Body-Diode Characteristics 125°C 25°C VGS=10V VGS=4.5V ID=18A VGS=4.5V 3.5V ID(A) 125°C VGS(Volts) Figure Transfer Characteristics 25°C 3.0V 4.5V VDS=5V
VGS=2.5V
VGS=10V
Temperature (°C) Figure On-Resistance Junction Temperature
25°C
Alpha Omega Semiconductor, Ltd.
AO4430
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 8000 VDS=15V ID=18A Capacitance (pF) 6000 Ciss
4000
2000
Crss
Coss
(Volts) Figure Capacitance Characteristics
100.0 RDS(ON) limited 10ms (Amps) 10.0 0.1s TJ(Max)=150°C TA=25°C 100µs Power 10µs
0.001
TJ(Max)=150°C TA=25°C
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001 0.0001 0.001 0.01
Toff 1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO4430 uses advanced trench technology provide excellent RDS(ON), shoo

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