Linear Integrated Systems MONOLITHIC DUAL TRANSISTORS HIGH G
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LS350 LS351 LS352
Linear Integrated Systems
MONOLITHIC DUAL TRANSISTORS
HIGH GAIN TIGHT MATCHING HIGH 10µA |VBE1-VBE2| 0.2mV TYP. 275MHz TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 25°C (unless otherwise noted) Collector Current 10mA
Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Device Dissipation Free Linear Derating Factor
-65° +200°C +150°C SIDE 250mW 2.3mW/°C BOTH SIDES 500mW 4.3mW/°C
MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS350 LS351 LS352 Collector Base Voltage BVCBO BVCEO BVEBO BVCCO VCE(SAT) ICBO IEBO COBO CC1C2 IC1C2 Collector Emitter Voltage Emitter Base Voltage Collector Collector Voltage Current Gain Current Gain Current Gain Collector Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Output Capacitance Collector Collector Capacitance Collector Collector Leakage Current Current Gain Bandwidth Product Narrow Band Noise Figure
MIN. MIN. MIN. MIN. MIN. MAX. MIN. MAX. MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX.
UNITS
CONDITIONS 10µA 10µA 10µA 10µA 10µA 100µA 1mA,
NOTE VCE= VCE= VCE= 0.1mA NOTE
NOTE4 100µA 200Hz 1KHz
Linear Integrated Systems
4042 Clipper Court, Fremont, 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
MATCHING CHARACTERISTICS SYMBOL CHARACTERISTICS Base Emitter Voltage Differential |VBE1-VBE2| |(VBE1-VBE2)|/°C |IB1- IB2| |(IB1- IB2)|/°C hFE1/hFE2 Base Emitter Voltage Differential Change with Temperature Base Current Differential Base Current Differential Change with Temperature Current Gain Differential
LS350
LS351
LS352
TYP. MAX. TYP. MAX. MAX. MAX.
UNITS µV/°C µV/°C nA/°C
CONDITIONS 10µA
-55°C +125°C
10µA
-55°C +125°C TYP.
TO-71
Lead
0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115
TO-78
0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100
P-DIP
0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX.
0.016 0.019 DIM. 0.016 0.021 DIM. 0.029 0.045
LEADS
0.019 DIA. 0.016 0.100
0.500 MIN.
0.050
SOIC
0.150 (3.81) 0.158 (4.01)
0.100
0.046 0.036
0.048 0.028 0.028 0.034
0.188 (4.78) 0.197 (5.00)
0.228 (5.79) 0.244 (6.20)
NOTES:
These ratings limiting values above which serviceability semiconductor impaired. reverse base-to-emitter voltage must never exceed volts; reverse base-to-emitter current must never exceed LS350: VCB= 20V; LS351 LS352: VCB= 30V.
LS351: VCC= ±45V; LS352: VCC= ±80V; LS350: VCC= ±25V.
Linear Integrated Systems
4042 Clipper Court, Fremont, 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
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