Linear Integrated Systems CONFORMANCE MONOLITHIC DUAL TRANSISTORS

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Linear Integrated Systems CONFORMANCE MONOLITHIC DUAL TRANSISTORS

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LS318
Linear Integrated Systems
CONFORMANCE MONOLITHIC DUAL TRANSISTORS
CONFORMANCE TYP. ABSOLUTE MAXIMUM RATINGS NOTE 25°C (unless otherwise noted) Collector Current Maximum Temperatures Storage Temperature Range Operating Junction Temperature Maximum Power Dissipation Device Dissipation Free Linear Derating Factor
10mA
-65°C +200°C +150°C SIDE 250mW 2.3mW/°C BOTH SIDES 500mW 4.3mW/°C
MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS318 Conformance BVCBO BVCEO BVEBO BVCCO VCE(SAT) ICBO IEBO COBO CC1C2 IC1C2 Collector-Base Breakdown Voltage Collector Emitter Voltage Emitter-Base Breakdown Voltage Collector Collector Voltage Current Gain Current Gain Current Gain Collector Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Output Capacitance Collector Collector Capacitance Collector Collector Leakage Current Current Gain Bandwidth Product Narrow Band Noise Figure 0.25
MAX. MIN. MIN. MIN. MIN. MIN. MAX. MIN. MAX. MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX.
UNITS
CONDITIONS 10-100-1000µA 10µA 10µA 10µA 10µA 10µA 100µA
NOTE
1mAIB ±45V 100µA 200Hz f=1KHz
Linear Integrated Systems
4042 Clipper Court, Fremont, 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
MATCHING CHARACTERISTICS 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS318 Base Emitter Voltage Differential |VBE1-VBE2| |(VBE1-VBE2)|/°C |IB1- IB2| |(IB1-IB2)|/°C hFE1/hFE2 Base Emitter Voltage Differential Change with Temperature Base Current Differential Base Current Differential Change with Temperature Current Gain Differential
TYP. MAX. TYP. MAX. MAX. MAX. TYP.
UNITS µV/°C nA/°C
CONDITIONS -55°C 10µA 10µA -55°C 10µA
+125°C +125°C
TO-71
Lead
0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115
TO-78
0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100
P-DIP
0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX.
0.016 0.019 DIM. 0.016 0.021 DIM. 0.029 0.045
LEADS
0.019 DIA. 0.016 0.100
0.500 MIN.
0.050
SOIC
0.150 (3.81) 0.158 (4.01)
0.100
0.046 0.036
0.048 0.028 0.028 0.034
0.188 (4.78) 0.197 (5.00)
0.228 (5.79) 0.244 (6.20)
NOTES:
These ratings limiting values above which serviceability semiconductor impaired. reverse base-to-emitter voltage must never exceed volts; reverse base-to-emitter current must never exceed
Linear Integrated Systems
4042 Clipper Court, Fremont, 94538 TEL: (510) 490-9160 FAX: (510) 353-0261

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