Linear Integrated Systems MONOLITHIC DUAL TRANSISTORS VERY H

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Linear Integrated Systems MONOLITHIC DUAL TRANSISTORS VERY H

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LS310 LS311 LS312 LS313
Linear Integrated Systems
MONOLITHIC DUAL TRANSISTORS
VERY HIGH GAIN TIGHT MATCHING HIGH 10µA-1mA |VBE1-VBE2| 0.2mV TYP. 250MHz TYP. ABSOLUTE MAXIMUM RATINGS NOTE 25°C (unless otherwise noted) Collector Current 10mA Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Device Dissipation Free Linear Derating Factor
-65° +200°C +150°C SIDE 250mW 2.3mW/°C BOTH SIDES 500mW 4.3mW/°C
MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 UNITS CONDITIONS Collector Base Voltage MIN. 10µA BVCBO BVCEO BVEBO BVCCO ICBO IEBO COBO CC1C2 IC1C2 Collector Emitter Voltage Emitter-Base Breakdown Voltage Collector Collector Voltage Current Gain Current Gain Current Gain Collector Cutoff Current Emitter Cutoff Current Output Capacitance Collector Collector Capacitance Collector Collector Leakage Current Current Gain Bandwidth Product Narrow Band Noise Figure 0.25 0.25 0.25 MIN. MIN. MIN. 10µA 10µA 10µA 10µA NOTE
MIN. 1000 MAX. MIN. 0.25 MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX.
100µA NOTE 100µA 200Hz, f=1KHz 0.1mA NOTE
VCE(SAT) Collector Saturation Voltage
Linear Integrated Systems
4042 Clipper Court, Fremont, 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
ELECTRICAL CHARACTERISTICS 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 MIN. UNITS CONDITIONS |VBE1-VBE2| Base Emitter Voltage Differential |(VBE1-VBE2)|/°C Base Emitter Voltage Differential Change with Temperature |IB1- IB2| |(IB1-IB2)|/°C hFE1/hFE2 Base Current Differential Base Current Differential Change With Temperature Current Gain Differential TYP. 1.25 TYP. TYP. MAX. TYP. MAX. µV/°C 10µA
-55°C +125°C
MAX. nA/°C 10µA 10µA
-55°C +125°C
TO-71
Lead
0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115
TO-78
0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100
P-DIP
0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX.
0.016 0.019 DIM. 0.016 0.021 DIM. 0.029 0.045
LEADS
0.019 DIA. 0.016 0.100
0.500 MIN.
0.050
SOIC
0.150 (3.81) 0.158 (4.01)
0.100
0.046 0.036
0.048 0.028 0.028 0.034
0.188 (4.78) 0.197 (5.00)
0.228 (5.79) 0.244 (6.20)
NOTES:
These ratings limiting values above which serviceability semiconductor impaired. reverse base-to-emitter voltage must never exceed volts; reverse base-to-emitter current must never exceed LS310: VCB= 20V; LS311, LS312 LS313: 30V.
LS310, LS311 LS313: VCC= ±45V; LS312: VCC= ±100V.
Linear Integrated Systems
4042 Clipper Court, Fremont, 94538 TEL: (510) 490-9160 FAX: (510) 353-0261

Linear Integrated Systems MONOLITHIC DUAL TRANSISTORS VERY H

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