Gb/s Transimpedance Amplifier Data Sheet Nortel Networks Gb/

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Gb/s Transimpedance Amplifier Data Sheet Nortel Networks Gb/

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Operates OC-192/STM-64 data rates 12.5 Gb/s Interfaces with photodetectors Non-inverting operation into output load Single power supply Small size: 0.95 transimpedance gain bandwidth root-Hz input equivalent noise with detector (typ) power dissipation pk-pk input current overload 85°C operating temperature
Gb/s Transimpedance Amplifier
Data Sheet
Nortel Networks Gb/s Transimpedance Amplifier used conjunction with photodetector convert optical signal into electrical signal which then amplified further processing other elements linear channel. device provided bare form, should used with high speed, capacitance photodetector (0.2pF), closely mounted hermetic package. transimpedance gain provided with maximum input current capability pk-pk. receives single-ended current based input generates single ended voltage output. device requires single power supply dissipates (typ). Noise optimized Gb/s operation, with sensitivity achieved 10-10 error rate, using detector with capacitance responsivity A/W. Microelectronics Group Nortel Networks offers portfolio optical networking high-performance optical receiver transmitter applications. part family Gb/s components, which provides power chip-count savings designer fiber-based datacom telecom solutions.
Applications
SONET/SDH-based transmission systems, test equipment modules OC-192 fiber optic modules line termination Gb/s SONET applications
Figure System Block Diagram
Iphoto Photodetector
output
Definitions
Symbol TZIN TZOUT Type Functionality Photocurrent input Output voltage Positive power supply Ground supply
Absolute Maximum Ratings
These stress ratings only. Exposure stresses beyond these maximum ratings cause permanent damage affect reliability device. Avoid operating device outside recommended operating conditions defined below. Unless otherwise indicated, absolute maximum ratings listed shall apply over operating range carrier/IC interface).
Symbol Tstg trans. Parameter Positive voltage supply w.r.t. ground Maximum operating temperature Maximum junction temperature Storage temperature Maximum current Maximum transient current average peak-to-peak Rating Units pk-pk pk-pk Notes
Notes: Applies under conditions power on/off, temperature, etc. allowed power-up Operating temperature refers temperature between base carrier Packaged hermetic enclosure, unpowered will withstand 200°C hours, unpowered, non-oxidizing environment maximum PIN, average peak-to-peak currents maximum optical power level. preamp should damaged specified average peak-to-peak current levels duration milliseconds; applied once cumulative. currents defined with duty cycle waveform shown below. operating electrical performance specified this document guaranteed under these conditions. average current corresponds input optical power photodetector with responsivity
Gb/s Transimpedance Amplifier
Ratio greater than equal
Figure Current Waveform (50% duty cycle)
Outputs open circuit protected short circuit allowed). short circuit ground will cause damage case should output data swing output exceed pk-pk into load when subject absolute maximum ratings.
Characteristics
Specified 85°C carrier/IC interface, over supply voltages lifetime
Symbol Parameter Supply voltage Supply current Quiescent bias voltage input Power dissipation Units Notes
Note: should ensured that actual reverse bias voltage across photodetector accordance with specs.
Gb/s Transimpedance Amplifier
Characteristics
specification based upon high-speed photodetector with capacitance max. bandwidth GHz. electrical model photodetector shown Figure Packaging parasitics assumed Figure Operation guaranteed load impedance (better than 20dB return loss GHz, phase angle).
Symbol Parameter Average input equivalent noise current density High frequency -3dB corner BW3dB frequency -3db corner Figure Electrical Frequency Response Figure Electrical Frequency Response Units Notes
16.5
BW3dB
High frequency -3dB corner variation volt temperature Transimpedance Gain Gain flatness
Figure Electrical Frequency Response
Group delay variation Gain peaking (relative MHz) Figure Electrical Frequency Response
Output return loss Input current before overload Output voltage Power supply noise rejection
mApeak
VOUTQ
Table specifies characteristics pre-amp chip over operating temperature range from 85°C carrier/die interface, supply voltage variation, lifetime.
Notes: coupling assumed coupling capacitor used high frequency corner should still meet mask shown below Load impedance (better than return loss GHz, phase angle) spurious modes resonance gain flatness from Defined ratio noise amplitude supply rail over noise amplitude output frequencies Measurement made relative average signal level between Preamp accepts input levels mAp-p with allowable distortion reduction width relative amplitude from values obtained with mAp-p input signaz Group delay frequency determined AC-coupling
Gb/s Transimpedance Amplifier
[dB]
0.143
0.054
Frequency
Figure Electrical Model photodetector
Figure Electrical Frequency Response
Physical Dimensions
Item Chip size size (min) Chip Thickness Number pads Specification 1.10 0.10 0.95 0.10
Packaging Environment
provided tested bare form. Devices should packaged hermetic enclosure comply with decoupling wirebond requirements given Figure adequate performance. device substrate should grounded with back-side metallized follows: 10nm 30nm 500nm
Item Operating temperature Storage conditions (non-packaged) Electrostatic discharge (human body model) Metallurgy Hermeticity Attach Specs 85°C defined interface between substrate. Bare shall stored nitrogen.
Class Precautions
Gold Devices will qualified hermetic enclosure 315°C sec. max.
Gb/s Transimpedance Amplifier
WB11 Ferrite Bead 0.125 WB10
WB12
1000
WB14
WB13
DIODE
0.35
0.35 WB13
0.15
1000
Figure Packaging Parasitics
Reliability
Chips will exhibit stable performance without infant mortalities have projected random plus wear failure rate better than FITS 60°C carrier/IC interface) given time over years lifetime.
Padout Diagram
(900,750)
GND2
(350,650)
GND3
(800,650)
TZIN
(800,500)
(100,375)
PREAMP PADOUT VIEW
(800,325)
TZOUT
GND4
GND1
(800,175) (100,100) (50)
(0,0) (425,0)
1100
Total Area: (1100
Figure Padout Diagram
Chip Padout
Note: spacing Wirebonds should kept short possible except GND3. number length GND3 wirebonds used adjust peaking bandwidth units given
Gb/s Transimpedance Amplifier
(100,525)
Notes:
Gb/s Transimpedance Amplifier
Microelectronics Group Nortel Networks global leader development modules communications networks. additional information Nortel Networks products services offered Microelectronics group, please contact your local representative.
Nortel Networks Microelectronics Group Attn: Marketing Department 2745 Iris Street Ottawa, Ontario Canada Tel: 1-800-4 NORTEL (1-800-466-7835) Fax: 1-613-763-8416 Email: micro@nortelnetworks.com
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Publication #84032.37/02-00 Issue

Gb/s Transimpedance Amplifier Data Sheet Nortel Networks Gb/

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