omponents 20736 Marilla Street Chatsworth TSMBJ1006C THRU TSMBJ10

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omponents 20736 Marilla Street Chatsworth TSMBJ1006C THRU TSMBJ10

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omponents 20736 Marilla Street Chatsworth
TSMBJ1006C THRU TSMBJ1024C
Transient Voltage Protection Device Volts
DO-214AA (SMBJ)
Oxide-Glass passivated Junction Bi-Directional protection single device Surge capabilities 100A@10/1000us 400A@8/20us High Off-State impedance On-State voltage Plastic material flammability classification
Mechanical Data
Case Molded plastic Polarity None cathode band denotes Approx Weight 0.093grams
Maximum Rating
Characteristic Non-repetitive peak impulse current Non-repetitive peak On-state current Operating temperature range Junction storage temperature range Symbol ITSM TSTG Value 100A -40~150oC -55~150oC
Unit 10/1000us 8.3ms, one-half cycle
DIMENSIONS INCHES .078 .077 .002 -.030 .065 .205 .160 .130 2.00 1.96 -.76 1.65 5.21 4.06 3.30
Thermal Resistance
Characteristic Thermal Resistance junction lead Thermal Resistance junction ambient Typical positive temperature coefficient breakdown voltage Symbol
RqJL RqJA
.096 .083 .008 .060 .091 .220 .180 .155
2.44 2.10 1.52 2.32 5.59 4.57 3.94
NOTE
Value 100oC/W
Unit
SUGGESTED SOLDER LAYOUT
0.090"
recommended layout
0.085"
VBR/TJ
0.1%/oC
0.070"
www.mccsemi.com
Revision: 2003/04/30
TSMBJ1006C thru TSMBJ1024C
ELECTRICAL CHARACTERISTIC Unless otherwise specified
Parameter On-State Rated Off-state Breakover Voltage Breakover Current Repetitive OffLeakage Voltage =1.0A state Voltage Curr ent@V
Holding Current
Off-State Capacitance Typ.
Symbol Units Limit TSMBJ1006C TSMBJ1007C TSMBJ1010C TSMBJ1012C TSMBJ1016C TSMBJ1018C TSMBJ1022C TSMBJ1024C
VDRM Volts
IDRM
Volts
Volts
IBOmA
IBO+
IHmA
MAXIMUM RATED SURGE WAVEFORM Waveform Standard
2/10 8/20 10/160 10/700 10/560 10/1000 GR-1089-CORE 61000-4-5 Part ITU-T K20/21 Part GR-1089-CORE
PEAK PULSE CURRENT
Peak value (Ipp)
rise time peak value decay time half value
Half value
TIME
Symbol VDRM IDRM
NOTE
Parameter
Stand-off voltage Leakage current stand-off voltage Breakdown voltage Breakdown current Breakover voltage Breakover current Holding current state voltage Peak pulse current Off-state capacitance
NOTE: NOTE:
IDRM
VDRM
this criterion obeyed, TSPD triggers does return correctly high-resistance state. surge recovery time. does exceed 30ms. Off-state capacitance measured f=1.0MHz 1.0Vrms signal VR=2Vdc bias.
www.mccsemi.com
Revision: 2003/04/30
TSMBJ1006C thru TSMBJ1024C
Fig.1 Off-State Current Junction Temperature
Fig.2 Relative Variation Breakdown Voltage Junction Temperature
I(DRM) OFF-STATE CURRENT(uA)
NORMALISED BREAKDOWN VOLTAGE
VBR(TJ)
1.15
VBR(TJ=25)
VDRM
1.05
0.01
0.95
0.001
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
Fig.3 Relative Variation Breakover Voltage Junction Temperature
Fig.4 On-State Current On-State Voltage
NORMALISED BREAKOVER VOLTAGE
VBO(TJ)
1.05
VBO(TJ=25)
I(T) ON-STATE CURRENT
0.95
JUNCTION TEMPERATURE
V(T) ON-STATE VOLTAGE
Fig.5 Relative Variation Holding Current Junction Temperature
Fig.6 Relative Variation Junction Capacitance Reverse Voltage Bias
NORMALISED HOLDING CURRENT
NORMALISED CAPACITANCE
CO(VR) CO(VR f=1MHz VRMS
IH(TJ) IH(TJ =25)
JUNCTION TEMPERATURE
REVERSE VOLTAGE
www.mccsemi.com
Revision: 2003/04/30
TSMBJ1006C thru TSMBJ1024C
TYPICAL APPLICATION CIRCUITS
FUSE
RING TELECOM EQUIPMENT E.G. MODEM
TSPD
RING
TSPD
TELECOM EQUIPMENT E.G. ISDN
TSPD
RING
TSPD TSPD TSPD
TELECOM EQUIPMENT E.G. LINE CARD
(Positive Temperature Coefficient) overcurrent protection device.
www.mccsemi.com
Revision: 2003/04/30

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