P-Channel Enhancement Mode Power MOSFET Features Simple Drive Req
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AF4811P
P-Channel Enhancement Mode Power MOSFET Features
Simple Drive Requirement On-resistance Fast Switching Characteristic
advanced power MOSFET provides designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SOP-8 package universally preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters. -7.3
Product Summary
BVDSS RDS(ON)
Assignments
Descriptions
Name
Description Source Gate Drain
SOP-8
Ordering information
Feature :MOSFET 4811P Package SOP-8 Lead Free Blank Normal Lead Free Package Packing Blank Tube Bulk Tape Reel
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2004
AF4811P
P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Symbol TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note Pulsed Drain Current (Note Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating -7.3 -5.8 0.02 Units
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note Max. Maximum Units
Electrical Characteristics unless otherwise specified
Symbol BVDSS BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=-250uA Reference 25oC, ID=-1mA VGS=-10V, ID=-7A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±25V ID=-7A, VDS=-24V, VGS=-4.5V VDS=-15V, ID=-1A, RG=3.3, VGS=-10V RD=15 VGS=0V, VDS=-25V, f=1.0MHz Min. Typ. -0.02 Max. ±100 1560 Units V/oC
Source-Drain Diode
Symbol Parameter Forward Voltage (Note Reverse Recovery Time (Note Reverse Recovery Charge
Test Conditions IS=-2A, VGS=0V IS=-7A, VGS=0V, dl/dt=100A/µs
Min.
Typ.
Max. -1.2
Unit
Note Surface mounted copper board; 10sec when mounted Min. copper pad. Note Pulse width limited Max. junction temperature. Note Pulse width 300us, duty cycle
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF4811P
P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristic Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF4811P
P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued)
Gate Charge Characteristics
Typical Capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
Gate Charge Waveform
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF4811P
P-Channel Enhancement Mode Power MOSFET Marking Information
SOP-8L
View
Logo Part Number
4811P
code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: =2004 Factory code
Package Information
Package Type: SOP-8L
VIEW (4X)
0.015x45
(4X)
VIEW
Symbol
Dimensions Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10
Dimensions Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004
Anachip Corp. www.anachip.com.tw
Rev.
2004
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