Pulse Width Agile Gate Drive Module High Frequency Gate Drive Mod

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Pulse Width Agile Gate Drive Module High Frequency Gate Drive Mod

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FPS-4N 28MHz
Pulse Width Agile Gate Drive Module
High Frequency Gate Drive Module DE-Series MOSFETs 28MHz Frequency <15ns Pulse Width Typical Rise Time 30ns Throughput Delay
FPS-4N Gate Drive Module designed with DE-SERIES power MOSFETs. developed design tool support system designer evaluation prototyping using DE-SERIES devices. provides gate drive MOSFET mounting, thereby freeing designer focus specifics system under development. utilizing design techniques developed DEI, FPS-4N drive DE-150 DE-275 Series MOSFETs frequencies 28MHz with pulse width agility from <15ns continuous, rise times 34ns. FPS-4N also drive DE-375 frequencies 18MHz, with comparable pulse width switching speeds. Provisions heat sinking MOSFET stripline drain source interconnect topology allow user easily incorporate FPS-4N driver power MOSFET pulse width agile module high speed, high power circuits such class class generators, high speed pulsed voltage sources pulsed current sources. control gate input FPS4N into high true logic signal. This drive voltage
source that level shifted +15V before being applied DE-SERIES gate. Therefore gate drive will follow input control gate time, with delay (TD) specified specifications section this data sheet. output section provides drain source connections (SD1 SD2) stripline topology. Mounting holes provided four corners that secured chassis, there holes either side device high power mounting DE-Series device heat sink. LEDs used support power indicators. detailed discussion design topology FPS-4N addressed "Gate Driver Design Switch Mode Applications" technical note, available download from DEI's site http://www. directedenergy.com. users interested designing this circuit into their systems, circuit board layout fabrication package available from DEI. Contact more information. FPS-4N provided fully assembled tested module. DE-Series MOSFET sold separately.
DIRECTED ENERGY INCORPORATED
SPECIFICATIONS (All specifications measured into 2000pF load (typical DE-275 MOSFET input capacitance)
PARAMETER Output Gate Drive Rise Time (10% 90%) Max. Pulse Recurrence Frequency ±1ns 28MHz driving 2000pF load (typical DE-275 CISS) 19MHz driving 3500pF load (typical DE-375 CISS) <15ns 30ns typical <50ps Sigma
Typical Rise Time, 2000pF Load
(2.5V/Div Vert. Scale, 10ns/Div Horiz. Scale)
VALUE
Pulse Width Throughput Delay Jitter Inputs Input Control Gate Support Power
into +5VDC <0.1A +15VDC 0.5A gate drive), ~2.5A 13.56MHz, 2000pF load
General Dimensions Cooling 6.0" (15.2cm) 2.5" (6.35 50-100CFM flow required, depending upon frequency
<15ns Min. Pulse Width, 2000pF Load
(2V/Div Vert. Scale, 25ns/Div Horiz. Scale)
SPECIFICATIONS SUBJECT CHANGE WITHOUT NOTICE
+15VDC support power requirements highly dependent frequency load capacitance. +15VDC power requirements approximated formula 0.5A CV2F, where input capacitance (CISS) MOSFET being driven, gate drive voltage (typically 15V), pulse repetition frequency.
28MHz Max. Frequency, 2000pF Load
(2V/Div Vert. Scale, 50ns/Div Horiz. Scale)
#9200-0219 2000, Directed Energy, Inc.
FPS-4N Mechanical Layout Mounting Hole Locations
Directed Energy, Inc. IXYS Company 2401 Research Blvd., Suite Fort Collins, 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com

Pulse Width Agile Gate Drive Module High Frequency Gate Drive Mod

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