Silicon triple diffusion planar type darlington 4.2±0.2 Unit

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Silicon triple diffusion planar type darlington 4.2±0.2 Unit

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2SD1275, 2SD1275A
Silicon triple diffusion planar type darlington
4.2±0.2
Unit:
0.7±0.1
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
power amplification Complementary 2SB0949 2SB0949A
High forward current transfer ratio High-speed switching Full-pack package which installed heat sink with screw
16.7±0.3
7.5±0.2
Features
3.1±0.1
Solder (4.0)
14.0±0.5
Absolute Maximum Ratings 25°C
Parameter Collector-base voltage (Emitter open) 2SD1275 2SD1275A VCEO VEBO 25°C Tstg Symbol VCBO Rating +150 Unit
1.4±0.1
1.3±0.2 0.5+0.2 -0.1
0.8±0.1
2.54±0.3 5.08±0.5
Collector-emitter voltage 2SD1275 (Base open) 2SD1275A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
Base Collector Emitter EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
Electrical Characteristics 25°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SD1275 2SD1275A 2SD1275 2SD1275A IEBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) tstg ICEO 2SD1275 2SD1275A ICBO Symbol VCEO Conditions
Unit
Emitter-base cutoff current (Collector open) Forward current transfer ratio
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE2
Publication date: February 2003
SJD00189BED
2SD1275, 2SD1275A
TC=25°C
VCE=4V
Collector power dissipation
Collector current
Collector current
(1)TC=Ta (2)With heat sink (3)With heat sink (4)Without heat sink (PC=2W)
IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA
25°C TC=100°C -25°C
Ambient temperature (°C)
Collector-emitter voltage
Base-emitter voltage
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
IC/IB=250
VCE=4V
Collector output capacitance (pF) (Common base, input open circuited)
IE=0 f=1MHz TC=25°C
Forward current transfer ratio
25°C
TC=100°C
TC=-25°C 100°C
25°C -25°C
0.01 0.01
0.01
Collector current
Collector current
Collector-base voltage
Safe operation area
repetitive pulse TC=25°C
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
Collector current
t=10ms t=1ms
2SD1275A 2SD1275
10-1
0.01
10-2 10-4
10-3
10-2
10-1
Collector-emitter voltage
Time
SJD00189BED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising product technologies described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2002

Silicon triple diffusion planar type darlington 4.2±0.2 Unit

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