power amplification Complimentary 2SB0942 2SB0942A 0.7±0.1 U

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power amplification Complimentary 2SB0942 2SB0942A 0.7±0.1 U

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2SD1267, 2SD1267A
power amplification Complimentary 2SB0942 2SB0942A
0.7±0.1
Unit:
10.0±0.2 5.5±0.2
4.2±0.2
Features
High forward current transfer ratio which satisfactory linearity. collector-emitter saturation voltage VCE(sat) Full-pack package which installed heat sink with screw.
4.2±0.2 2.7±0.2
7.5±0.2
Absolute Maximum Ratings 25°C
Parameter Collector-base voltage (Emitter open) 2SD1267 2SD1267A VCEO VEBO 25°C Tstg Symbol VCBO Rating +150 Unit
16.7±0.3
3.1±0.1
Solder (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 -0.1
14.0±0.5
0.8±0.1
Collector-emitter voltage 2SD1267 (Base open) 2SD1267A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
2.54±0.3 5.08±0.5
EIAJ: SC-67
Base Collector Emitter TO-220F-A1 Package
Electrical Characteristics 25°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SD1267 2SD1267A 2SD1267 2SD1267A IEBO hFE1
Symbol 2SD1267 2SD1267A ICES ICEO VCEO
Conditions
Unit
Emitter-base cutoff current (Collector open) Forward current transfer ratio
hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) tstg
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE1
Publication date: March 2004
SJD00181BED
2SD1267, 2SD1267A
TC=25°C
VCE=4V 25°C
Collector power dissipation
Collector current
100mA
80mA 60mA
40mA 30mA
Collector current
(1)TC=Ta (2)With heat sink (3)With heat sink (4)Without heat sink (PC=2W)
IB=150mA
TC=100°C
-25°C
20mA 10mA
Ambient temperature (°C)
Collector-emitter voltage
Base-emitter voltage
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
IC/IB=10
VCE=4V
VCE=10V f=1MHz TC=25°C
Forward current transfer ratio
Transition frequency (MHz)
25°C
TC=100°C
TC=100°C
-25°C
25°C -25°C
0.01 0.01
0.01
0.01
Collector current
Collector current
Collector current
Safe operation area
repetitive pulse TC=25°C
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
Collector current
t=1ms t=10ms
2SD1267A 2SD1267
10-1
0.01
1000
10-2 10-4
10-3
10-2
10-1
Collector-emitter voltage
Time
SJD00181BED
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export permit needs obtained from competent authorities Japanese Government products technical information described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising technical information described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2003

power amplification Complimentary 2SB0942 2SB0942A 0.7±0.1 U

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