UTXQ512 SRAM 4Mbit density Organized 512K 100ns (X=7) 25ns (X=8 X

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UTXQ512 SRAM 4Mbit density Organized 512K 100ns (X=7) 25ns (X=8 X

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UTXQ512 SRAM Product Overview
UTXQ512 SRAM
4Mbit density Organized 512K 100ns (X=7) 25ns (X=8 X=9) access time, asynchronous operation Commercial architecture compatible pin-out +125 inputs outputs (100ns, X=7) inputs (25ns, X=9) CMOS outputs (i.e., high current specifications) volt operation (100ns product, X=7) Inputs volt compatible volt operation (25ns product, X=8) Inputs volt tolerant volt operation (25ns product, X=9) Inputs volt tolerant
UTXQ512 SRAM
Available UT7Q512 5962-99606 UT8Q512 5962-99607 UT9Q512 pending
UTXQ512 SRAM
Block Diagram
Clk. Gen.
Pre-Charge Circuit Memory Array 1024 Rows 512x8 Columns
Select
Circuit Column Select
Data Cont. Gen.
UTXQ512 SRAM
Functional Description
Device Enable Inactive Active Active Active
X(1) X(1)
X(1)
DQ(7:0) High High DOUT
Mode Deselected Output disabled Read Write
Power Standby Active Active Active
means don't care.
UT7Q512 SRAM
Total dose irradiation testing MIL-STD-883 Method 1019
Intrinsic total-dose: rad(Si) nominal Space environment shields greater than 100Krad(Si)
32-lead surface mount UTMC SPACEPAK package only
Immune >100 MeV-cm2/mg (per testing)
Memory Cell Cross Section MeV-cm2/mg, 7.32E-8cm2 Heavy 1.5E-7 error bit-day (Adams worst case, geosynchronous)
Inherent Neutron Fluence 1.0E14n/cm2 Nominal Dose Rate
Upset 1.0E9 rad(Si)/sec Latchup 1.0E11 rad(Si)/sec
UT7Q512 SRAM Space Data)
UT7Q512 SRAM
Error Cross-Section /bit) 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 1.E-12 (MeV-cm2/mg)
Device Device Weibull
Weibull Parameters: Shape Width Saturated Cross-Section 7.32E-8 (cm2/bit) Onset MeV-cm2/mg Device Parameters: Device Depth Funnel Depth
0.8um 0.8um
Adams Worst Case Heavy Error Rate: 1.5E-7 errors/bit-day
UT8Q512 SRAM
Total dose irradiation testing MIL-STD-883 Method 1019
Intrinsic total-dose: rad(Si) nominal Space environment shields greater than 100Krad(Si)
36-lead surface mount UTMC SPACEPAK package only
Immune >100 MeV-cm2/mg testing)
Memory Cell Cross Section MeV-cm2/mg, 10E-9cm2 3.8E-11 error bit-day (Adams worst case, geosynchronous) Proton upset immune
Inherent Neutron Fluence 1.0E14n/cm2 Nominal Dose Rate
Upset >1.0E9 rad(Si)/sec Latchup 1.0E11 rad(Si)/sec
UT8Q512 SRAM Space Data)
Error Cross-Section /bit)
UT8Q512 SRAM
1.E-08 1.E-09 1.E-10 1.E-11 1.E-12 Device Device Device Device Weibull
(MeV-cm2/mg) Weibull Parameters: Shape Width 2/bit) Saturated Cross-Section 10E-9 Onset MeV-cm2/mg Device Parameters: Device Depth Funnel Depth
0.25um 0.25um
Adams Worst Case Error Rate: 3.8E-11 errors/bit-day
UT7Q512 SRAM
Packaging (100ns product) 32-lead traditional flatpack 0.48 inches, centers grams 32-lead surface mount UTMC SPACEPAK package only 0.48 inches, centers grams 4Q99
UT8Q512 SRAM
Packaging (25ns product) 36-lead traditional flatpack 0.48 inches, centers grams 36-lead surface mount UTMC SPACEPAK package only 0.48 inches, centers grams 4Q99
UT9Q512 SRAM
Packaging (25ns product) 36-lead traditional flatpack 0.48 inches, centers grams 36-lead surface mount UTMC SPACEPAK package only 0.48 inches, centers grams 1Q00
UTXQ512 SRAM
UTMC SPACEPAK
Glass Seal
Copper Tungsten Kovar Lead Frame
Glass Seal
Copper Tungsten Kovar
UT7Q512 SRAM
Single 5+/-10% volt supply (100ns) Average Operating Current, 100% duty cycle, 1MHz Read/Write cycle 80mA Average Operating Current, 100% duty cycle, 10MHz Read/Write cycle 100mA CMOS Stand-By Current (Post-Rad)
UT8Q512 SRAM
Single 3.3+/-10% volt supply (25ns) Average Operating Current, 100% duty cycle, 1MHz Read/Write cycle 125mA Average Operating Current, 100% duty cycle, 40MHz Read/Write cycle 180mA CMOS Stand-By Current (Post-Rad) 20mA
UT9Q512 SRAM
Single 5+/-10% volt supply (25ns) Average Operating Current, 100% duty cycle, 1MHz Read/Write cycle 125mA Average Operating Current, 100% duty cycle, 40MHz Read/Write cycle 180mA CMOS Stand-By Current (Post-Rad)
UTXQ512 SRAM
UTMC QCOTSApproach Obtain probed wafer form from single homogeneous material Incoming Wafer Inspection (per proposed Flow) X-ray irradiation die/wafer Wafer-to-wafer uniformity sites wafers Evaluate intra-wafer uniformity Street Cleaning necessary Eliminates possible shorting metal Verify heavy immune 128MeV-cm2/mg Quantify Total Dose Hardness product using Co-60 Establish survival probability confidence limits using variables approach UTMC Assembly backend flow Including DOE's, accelerated burn-ins, life-tests. Establish rate product
UTXQ512 SRAM
Value Added Wafer street cleaning, eliminates pealing metal shorts Wafer Assurance Radiation performance (SEE Total Dose) Reliability assessment (Oxide integrity) Rate target

UTXQ512 SRAM 4Mbit density Organized 512K 100ns (X=7) 25ns (X=8 X

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