low-frequency power amplification vertical deflection output Complemen

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low-frequency power amplification vertical deflection output Complemen

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2SD1264, 2SD1264A
low-frequency power amplification vertical deflection output Complementary 2SB0940, 2S0940A
16.7±0.3
Unit:
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
7.5±0.2
Features
High collector-emitter voltage (Base open) VCEO Large collector power dissipation Full-pack package which installed heat sink with screw
3.1±0.1
Solder (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 -0.1
Absolute Maximum Ratings 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SD1264 (Base open) 2SD1264A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tstg 25°C Symbol VCBO VCEO VEBO Rating +150 Unit
14.0±0.5
0.8±0.1
2.54±0.3 5.08±0.5
Base Collector Emitter EIAJ: SC-67 TO-220F-A1 Package
Electrical Characteristics 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SD1264 2SD1264A VEBO ICBO IEBO hFE1
Symbol VCBO VCEO
Conditions
Unit
Emitter-base voltage (Collector open) Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
hFE2 Collector-emitter saturation voltage Transition frequency VCE(sat)
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE1
Publication date: April 2003
SJD00180BED
2SD1264, 2SD1264A
TC=25°C IB=7mA
Collector power dissipation
Collector current
Collector current
(1)TC=Ta (2)With heat sink (3)With heat sink (4)Without heat sink (PC=2W)
TC=100°C
25°C -25°C
Ambient temperature (°C)
Collector-emitter voltage
Base-emitter voltage
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
IC/IB=10
VCE=10V
VCE=5V f=1MHz TC=25°C
Forward current transfer ratio
TC=100°C 25°C
Transition frequency (MHz)
TC=100°C
25°C -25°C
-25°C
0.01 0.01
0.01
0.01
Collector current
Collector current
Collector current
Safe operation area
repetitive pulse TC=25°C
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
Collector current
t=0.5ms t=5ms t=1ms
0.01
2SD1264A 2SD1264
10-1
0.001
10-2 10-4
10-3
10-2
10-1
Collector-emitter voltage
Time
SJD00180BED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising product technologies described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2002

low-frequency power amplification vertical deflection output Complemen

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