Silicon triple diffusion planar type darlington midium speed powe

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Silicon triple diffusion planar type darlington midium speed powe

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2SD1262, 2SD1262A
Silicon triple diffusion planar type darlington
midium speed power switching Complementary 2SB0939, 2SB0939A
10.0±0.3 1.5±0.1
Unit:
8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1
Collector-base voltage (Emitter open)
2SD1262 2SD1262A
VCBO VCEO VEBO
(6.5)
Collector-emitter voltage 2SD1262 (Base open) 2SD1262A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation 25°C Junction temperature Storage temperature
Base Collector Emitter N-G1 Package
Note) Self-supported type package also prepared.
Internal Connection
Tstg
+150
Electrical Characteristics 25°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SD1262 2SD1262A 2SD1262 2SD1262A IEBO hFE1
Symbol VCEO ICBO
Conditions
(7.6)
Parameter
Symbol
Rating
Unit
Unit
Emitter-base cutoff current (Collector open) Forward current transfer ratio
hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VCE(sat) VBE(sat) tstg
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE1
Publication date: April 2003
2500
SJD00178BED
(1.5)
Absolute Maximum Ratings 25°C
2.0±0.5
High forward current transfer ratio High-speed switching type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment.
4.4±0.5
0.8±0.1 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0)
4.4±0.5
14.4±0.5
3.0+0.4 -0.2
1.5+0 -0.4
Features
2SD1262, 2SD1262A
Collector-emitter saturation voltage VCE(sat)
TC=25°C
VCE(sat)
IC/IB=250 IC/IB=500 IC/IB=1000 TC=25°C
Collector power dissipation
Collector current
(1)TC=Ta (2)With heat sink (3)Without heat sink (PC=1.3W)
IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
0.01
Ambient temperature (°C)
Collector-emitter voltage
Collector current
VCE(sat)
Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat)
IC/IB=500
VBE(sat)
IC/IB=500
VCE=3V TC=100°C
TC=100°C 25°C -25°C
Forward current transfer ratio
25°C -25°C
TC=-25°C
25°C
100°C
0.01
0.01
Collector current
Collector current
Collector current
Safe operation area
repetitive pulse TC=25°C
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
t=10ms
Collector current
t=1ms t=300ms
2SD1262A 2SD1262
10-1
0.01
10-2 10-4
10-3
10-2
10-1
Collector-emitter voltage
Time
SJD00178BED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising product technologies described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2002

Silicon triple diffusion planar type darlington midium speed powe

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