power amplification with high forward current transfer ratio 8.5±

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power amplification with high forward current transfer ratio 8.5±

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2SD1259, 2SD1259A
power amplification with high forward current transfer ratio
8.5±0.2 6.0±0.2
10.0±0.3 1.5±0.1
Unit:
3.4±0.3 1.0±0.1
Features
High forward current transfer ratio Satisfactory linearity forward current transfer ratio type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment.
4.4±0.5
Absolute Maximum Ratings 25°C
Parameter Collector-base voltage (Emitter open) 2SD1259 2SD1259A VCEO VEBO 25°C Junction temperature Storage temperature Tstg Symbol VCBO Rating +150 Unit
Collector-emitter voltage 2SD1259 (Base open) 2SD1259A Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation
(6.5)
Base Collector Emitter N-G1 Package
Note) Self-supported type package also prepared.
Electrical Characteristics 25°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SD1259 2SD1259A 2SD1259 2SD1259A ICEO IEBO VCE(sat) ICBO V,IE V,IE V,IB V,IC 0.05 Symbol VCEO Conditions 2500 Unit
Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank 1500 1200 2500
(7.6)
(1.5)
0.8±0.1 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0)
2.0±0.5
4.4±0.5
14.4±0.5
3.0+0.4 -0.2
1.5+0 -0.4
Publication date: February 2004
SJD00175CED
2SD1259, 2SD1259A
IB=1.2mA
TC=25°C
Collector power dissipation
Collector current
0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA
Collector current
(1)TC=Ta (2)With heat sink (3)Without heat sink (PC=1.3W)
TC=100°C
25°C
-25°C
Ambient temperature (°C)
Collector-emitter voltage
Base-emitter voltage
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
IC/IB=40
VCE=4V TC=100°C
VCE=12V f=10MHz TC=25°C
Forward current transfer ratio
Transition frequency (MHz)
TC=100°C 25°C -25°C
-25°C 25°C
0.01 0.01
0.01
0.01
Collector current
Collector current
Collector current
Safe operation area
repetitive pulse TC=25°C
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
Collector current
t=1ms t=10ms t=300ms
2SD1259A 2SD1259
10-1
0.01
1000
10-2 10-4
10-3
10-2
10-1
Collector-emitter voltage
Time
SJD00175CED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technical information described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising technical information described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2003

power amplification with high forward current transfer ratio 8.5±

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