power amplification with high forward current transfer ratio 10.0

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

power amplification with high forward current transfer ratio 10.0

Datasheet Thumbnail

Top Searches for this datasheet

2SD1258
power amplification with high forward current transfer ratio
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.2
3.4±0.3 1.0±0.1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation 25°C Junction temperature Storage temperature
Symbol VCBO VCEO VEBO Tstg
Rating +150
Unit
(6.5)
Base Collector Emitter N-G1 Package
Note) Self-supported type package also prepared.
Electrical Characteristics 25°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol VCEO ICBO IEBO VCE(sat) Conditions 0.02 2000 Unit
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank
(7.6)
(1.5)
Absolute Maximum Ratings 25°C
2.0±0.5
High forward current transfer ratio Satisfactory linearity forward current transfer ratio type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment.
4.4±0.5
0.8±0.1 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0)
4.4±0.5
14.4±0.5
3.0+0.4 -0.2
1.5+0 -0.4
Features
Publication date: September 2003
SJD00174BED
2SD1258
(1)TC=Ta (2)With heat sink (3)Without heat sink (PC=1.3W)
TC=25°C IB=400µA 350µA 300µA
Collector-emitter saturation voltage VCE(sat)
VCE(sat)
IC/IB=25
Collector power dissipation
TC=100°C
Collector current
250µA 200µA
25°C
150µA 100µA
-25°C
50µA
0.01 0.01
Ambient temperature (°C)
Collector-emitter voltage
Collector current
VBE(sat)
IC/IB=25
VCE=4V TC=100°C 25°C -25°C
VCE=4V f=10MHz TC=25°C
Base-emitter saturation voltage VBE(sat)
Forward current transfer ratio
Transition frequency (MHz)
TC=100°C 25°C
-25°C
0.01 0.01
0.01
0.01
Collector current
Collector current
Collector current
Safe operation area
repetitive pulse TC=25°C
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
Collector current
t=10ms t=1ms
t=300ms
10-1
0.01
1000
10-2 10-4
10-3
10-2
10-1
Collector-emitter voltage
Time
SJD00174BED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising product technologies described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2002

power amplification with high forward current transfer ratio 10.0

Top Searches for this datasheet

Other recent searches