Silicon epitaxial planar type power switching Features colle

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Silicon epitaxial planar type power switching Features colle

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2SD1257, 2SD1257A
Silicon epitaxial planar type
power switching Features
collector-emitter saturation voltage VCE(sat) Satisfactory linearity forward current transfer ratio Large collector current type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment.
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.2
3.4±0.3 1.0±0.1
4.4±0.5
Parameter Collector-base voltage (Emitter open) 2SD1257 2SD1257A
Symbol VCBO VCEO VEBO 25°C Tstg
Rating +150
Unit
(6.5)
Collector-emitter voltage 2SD1257 (Base open) 2SD1257A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
Base Collector Emitter N-G1 Package
Note) Self-supported type package also prepared.
Junction temperature Storage temperature
Electrical Characteristics 25°C
Parameter Collector-emitter voltage (Base open) 2SD1257 2SD1257A ICBO IEBO hFE1
Symbol VCEO
Conditions V,IE V,IC 0.25 0.25
(7.6)
Absolute Maximum Ratings 25°C
Unit
Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) tstg
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE1
(1.5)
0.8±0.1 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0)
2.0±0.5
4.4±0.5
14.4±0.5
3.0+0.4 -0.2
1.5+0 -0.4
Publication date: September 2003
SJD00173BED
2SD1257, 2SD1257A
(1)TC=Ta (2)With heat sink (3)Without heat sink (PC=1.3W)
TC=25°C
Collector-emitter saturation voltage VCE(sat)
VCE(sat)
IC/IB=10 IC/IB=20 TC=25°C
Collector power dissipation
Collector current
IB=55mA
50mA 45mA 40mA 35mA 30mA 20mA 15mA
10mA
0.01 0.01
Ambient temperature (°C)
Collector-emitter voltage
Collector current
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
IC/IB=20
VBE(sat)
VBE(sat)
Base-emitter saturation voltage VBE(sat)
IC/IB=20
Base-emitter saturation voltage VBE(sat)
IC/IB=10 IC/IB=20 TC=25
TC=100°C 25°C
TC=-25°C 100°C 25°C
-25°C
0.01 0.01
0.01
0.01 0.01
Collector current
Collector current
Collector current
VCE=2V
VCE=10V f=10MHz TC=25°C
Collector output capacitance (pF) (Common base, input open circuited)
IE=0 f=1MHz TC=25°C
Forward current transfer ratio
Transition frequency (MHz)
TC=100°C 25°C -25°C
0.01
0.01
Collector current
Collector current
Collector-base voltage
SJD00173BED
2SD1257, 2SD1257A
ton, tstg,
Turn-on time Storage time tstg Fall time (µs)
Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=-IB2) VCC=50V TC=25°C
Safe operation area
repetitive pulse TC=25°C
Collector current
t=0.5ms
t=10ms t=300ms
tstg
t=1ms
2SD1257A 2SD1257
0.01
0.01
1000
Collector current
Collector-emitter voltage
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
10-1
10-2 10-4
10-3
10-2
10-1
Time
SJD00173BED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising product technologies described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2002

Silicon epitaxial planar type power switching Features colle

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