Silicon epitaxial planar type power switching Complementary 2SB09

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Silicon epitaxial planar type power switching Complementary 2SB09

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2SD1254
Silicon epitaxial planar type
power switching Complementary 2SB0931
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.2
3.4±0.3 1.0±0.1
4.4±0.5
Features
collector-emitter saturation voltage VCE(sat) Satisfactory linearity forward current transfer ratio Large collector current type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment.
Absolute Maximum Ratings 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation 25°C Junction temperature Storage temperature Tstg Symbol VCBO VCEO VEBO Rating +150 Unit
(6.5)
Base Collector Emitter N-G1 Package
Note) Self-supported type package also prepared.
Electrical Characteristics 25°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current(Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) tstg Conditions V,IE V,IC 0.15 Unit
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE2
(7.6)
(1.5)
0.8±0.1 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0)
2.0±0.5
4.4±0.5
14.4±0.5
3.0+0.4 -0.2
1.5+0 -0.4
Publication date: September 2003
SJD00171BED
2SD1254
(1)TC=Ta (2)With heat sink (3)Without heat sink (PC=1.3W)
TC=25°C IB=100mA
Collector-emitter saturation voltage VCE(sat)
VCE(sat)
IC/IB=20
Collector power dissipation
Collector current
50mA
30mA 25mA
TC=100°C 25°C -25°C
20mA 10mA
0.01 0.01
Ambient temperature (°C)
Collector-emitter voltage
Collector current
VBE(sat)
IC/IB=20
VCE=2V
Base-emitter saturation voltage VBE(sat)
VCE=10V f=10MHz TC=25°C
Forward current transfer ratio
Transition frequency (MHz)
25°C
TC=-25°C 100°C
TC=100°C 25°C -25°C
0.01 0.01
0.01
0.01
Collector current
Collector current
Collector current
Turn-on time Storage time tstg Fall time (µs) Collector output capacitance (pF) (Common base, input open circuited)
IE=0 f=1MHz TC=25°C
ton, tstg,
Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=-IB2) VCC=50V TC=25°C
Safe operation area
repetitive pulse TC=25°C
Collector current
t=10ms t=0.5ms
tstg
t=1ms t=300ms
0.01
0.01
1000
Collector-base voltage
Collector current
Collector-emitter voltage
SJD00171BED
2SD1254
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
10-1
10-2 10-4
10-3
10-2
10-1
Time
SJD00171BED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising product technologies described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2002

Silicon epitaxial planar type power switching Complementary 2SB09

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