power amplification Complementary 2SB0930, 2SB0930A 8.5±0.2

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power amplification Complementary 2SB0930, 2SB0930A 8.5±0.2

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2SD1253, 2SD1253A
power amplification Complementary 2SB0930, 2SB0930A
8.5±0.2
Unit:
3.4±0.3 1.0±0.1 6.0±0.2
10.0±0.3 1.5±0.1
Features
High forward current transfer ratio which satisfactory linearity collector-emitter saturation voltage VCE(sat) type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment.
4.4±0.5
Parameter Collector-base voltage (Emitter open) 2SD1253 2SD1253A
Symbol VCBO VCEO VEBO 25°C Tstg
Rating +150
Unit
2.0±0.5
Absolute Maximum Ratings 25°C
Collector-emitter voltage 2SD1253 (Base open) 2SD1253A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
(6.5)
Base Collector Emitter N-G1 Package
Note) Self-supported type package also prepared.
Junction temperature Storage temperature
Electrical Characteristics 25°C
Parameter Collector-emitter voltage (Base open) Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SD1253 2SD1253A 2SD1253 2SD1253A 2SD1253 2SD1253A IEBO hFE1
Symbol VCEO ICES ICEO
Conditions
(7.6)
Unit
Emitter-base cutoff current (Collector open) Forward current transfer ratio
hFE2 Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VCE(sat) tstg
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Rank classification Rank hFE1
Publication date: March 2004
SJD00170BED
(1.5)
0.8±0.1 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0)
4.4±0.5
14.4±0.5
3.0+0.4 -0.2
1.5+0 -0.4
2SD1253, 2SD1253A
(1)TC=Ta (2)With heat sink (3)Without heat sink (PC=1.3W)
TC=25°C
VCE=4V 25°C
Collector power dissipation
IB=150mA 100mA
Collector current
80mA 60mA
40mA 30mA
Collector current
TC=100°C
-25°C
20mA 10mA
Ambient temperature (°C)
Collector-emitter voltage
Base-emitter voltage
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
IC/IB=10
VCE=4V
VCE=10V f=1MHz TC=25°C
Forward current transfer ratio
Transition frequency (MHz)
25°C
TC=100°C
TC=100°C
-25°C
25°C -25°C
0.01 0.01
0.01
0.01
Collector current
Collector current
Collector current
Safe operation area
repetitive pulse TC=25°C
(1)Without heat sink (2)With heat sink
Thermal resistance (°C/W)
Collector current
t=10ms
t=1ms
t=300ms
2SD1253A 2SD1253
10-1
0.01
1000
10-2 10-4
10-3
10-2
10-1
Collector-emitter voltage
Time
SJD00170BED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technical information described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising technical information described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2003

power amplification Complementary 2SB0930, 2SB0930A 8.5±0.2

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