N-channel junction low-frequency impedance conversion infrared se

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N-channel junction low-frequency impedance conversion infrared se

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XP0D874 (XP1D874)
N-channel junction
low-frequency impedance conversion infrared sensor Features
elements incorporated into package Reduction mounting area assembly cost half
0.425
0.20±0.05
0.12+0.05 -0.02
1.25±0.10 2.1±0.1
0.65
0.65
Basic Part Number
2SK1842
1.3±0.1 2.0±0.1
0.9±0.1
Parameter Gate-drain voltage (Source open) Gate-source voltage (Drain open) Drain current Gate current Total power dissipation Channel temperature Storage temperature
Symbol VGDO VGSO Tstg
Rating +150
Unit
Source (FET1) Drain Source (FET2) EIAJ: SC-88A
Absolute Maximum Ratings 25°C
0.9+0.2 -0.1
Gate (FET2) Gate (FET1) SMini5-G1 Package
Marking Symbol: Internal Connection
FET1
FET2
Electrical Characteristics 25°C
Parameter Gate-drain surrender voltage Drain-source cutoff current Gate-source cutoff current Gate-source cutoff voltage Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Symbol VGDS IDSS IGSS VGSC Ciss Coss Crss Conditions 0.05 -1.3 -3.0 Unit
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 Measuring methods transistors.
Note) part number parenthesis shows conventional part number.
Publication date: December 2003 SJJ00224CED
0.2±0.1
XP0D874
0.16 25°C
0.10
Total power dissipation (mW)
0.08
Drain current (mA)
0.08 0.04
Drain current (mA)
0.12
-25°C
0.06 25°C 0.04 85°C
0.02
-1.2
-1.0
Ambient temperature (°C)
Drain-source voltage
Gate-source voltage
0.12 0.12
Forward transfer admittance (mS)
25°C 0.10
Forward transfer admittance (mS)
25°C 0.10
0.08
0.08
0.06
0.06
0.04
0.04
0.02
0.02
-2.5
-2.0
-1.5
-1.0
0.01
0.02
0.04
0.06
0.08
Gate-source voltage
Drain current (mA)
SJJ00224CED
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export permit needs obtained from competent authorities Japanese Government products technical information described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising technical information described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2003

N-channel junction low-frequency impedance conversion infrared se

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