Silicon epitaxial planar type Unit: 0.12+0.05 -0.02 gen

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Silicon epitaxial planar type Unit: 0.12+0.05 -0.02 gen

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XP06501 (XP6501)
Silicon epitaxial planar type
Unit:
0.12+0.05 -0.02
general amplification Features
elements incorporated into package Reduction mounting area assembly cost half
0.2±0.05
1.25±0.10 2.1±0.1
(0.65) (0.65)
Basic Part Number
2SD0601A (2SD601A)
1.3±0.1 2.0±0.1
0.9±0.1
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO Tstg
+150
Emitter (Tr1) Emitter (Tr2) Base (Tr2) EIAJ: SC-88
Parameter
Symbol
Rating
Unit
Marking Symbol: Internal Connection
0.9+0.2 -0.1
Absolute Maximum Ratings 25°C
Collector (Tr2) Base (Tr1) Collector (Tr1) SMini6-G1 Package
Electrical Characteristics 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE(Small/
Large)
Conditions
Unit
0.50 0.99
VCE(sat)
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Ratio between elements
Note) part number parenthesis shows conventional part number.
Publication date: August 2003 SJJ00214BED
0.2±0.1
XP06501
25°C
25°C
Total power dissipation (mW)
Collector current (mA)
Collector current (mA)
Ambient temperature (°C)
Collector-emitter voltage
Base current (mA)
25°C
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
Collector current (mA)
Base current (mA)
25°C 75°C -25°C
10-1
25°C -25°C
75°C
10-2
10-1
Base-emitter voltage
Base-emitter voltage
Collector current (mA)
25°C
Function FLAT 25°C
Forward current transfer ratio
Transition frequency (MHz)
75°C 25°C
Noise voltage (mV)
-25°C
10-1
-10-1
-102
Collector current (mA)
Emitter current (mA)
Collector current (µA)
SJJ00214BED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising product technologies described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2002

Silicon epitaxial planar type Unit: 0.12+0.05 -0.02 gen

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