Silicon epitaxial planar type Unit: 0.12+0.05 -0.02 gen

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Silicon epitaxial planar type Unit: 0.12+0.05 -0.02 gen

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XP06401 (XP6401)
Silicon epitaxial planar type
Unit:
0.12+0.05 -0.02
general amplification Features
elements incorporated into package Reduction mounting area assembly cost half
0.2±0.05
1.25±0.10 2.1±0.1
(0.65) (0.65)
Basic Part Number
2SB0709A (2SB709A)
1.3±0.1 2.0±0.1
0.9±0.1
Absolute Maximum Ratings 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg Rating -100 -200 +150 Unit
Emitter (Tr1) Emitter (Tr2) Base (Tr2) EIAJ: SC-88
Marking Symbol: Internal Connection
0.9+0.2 -0.1
Collector (Tr2) Base (Tr1) Collector (Tr1) SMini6-G1 Package
Electrical Characteristics 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE(Small/
Large)
Conditions -100
Unit
-100 0.50 0.99
VCE(sat)
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors. Ratio between elements
Note) part number parenthesis shows conventional part number.
Publication date: February 2004 SJJ00212BED
0.2±0.1
XP06401
25°C -250 -200 -150 -100 25°C
Total power dissipation (mW)
Collector current (mA)
Collector current (mA)
-100
-200
-300
-400
Ambient temperature (°C)
Collector-emitter voltage
Base current (µA)
-400 -350 -300 -250 -200 -150 -100 -0.4 -0.8 -1.2 -1.6 25°C
-240
25°C 75°C -25°C
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
-200
Collector current (mA)
Base current (µA)
25°C
75°C -25°C
-160
-120
-10-1
-10-2
-0.4
-0.8
-1.2
-1.6
-2.0
-10-3
-102
-103
Base-emitter voltage
Base-emitter voltage
Collector current (mA)
25°C
Collector output capacitance (pF) (Common base, input open circuited)
25°C
Forward current transfer ratio
Transition frequency (MHz)
-102 -103
75°C 25°C -25°C
10-1
-102
Collector current (mA)
Emitter current (mA)
Collector-base voltage
SJJ00212BED
XP06401
25°C
25°C
parameter
25°C
Noise figure (dB)
Noise figure (dB)
parameter
(µS)
10-2
10-1
10-1
10-1
10-4)
Emitter current (mA)
Emitter current (mA)
Emitter current (mA)
parameter
25°C
parameter
(µS)
10-4)
-102
Collector-emitter voltage
SJJ00212BED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technical information described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising technical information described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2003

Silicon epitaxial planar type Unit: 0.12+0.05 -0.02 gen

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