Semiconductors Bi-Directional Control Thyristor Product Info
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Bi-Directional Control Thyristor
Semiconductors
Bi-Directional Control Thyristor
Product Information Backlund, Jan-Olav Boeriis, Thomas, Robert Waishar, Waldmeyer, Orhan Toker Semiconductors February 1999.
Introduction
Bi-Directional Control Thyristor (BCT) concept high power phase control thyristors (PCTs) developed Semiconductors. anti-parallel high power thyristors integrated onto single silicon wafer assembled into housing. This feature will enable designers static compensators, static switches, soft starters motor drives meet higher demands concerning size, integration, reliability cost their product. Semiconductors developed this concept utilising silicon technology aiming product matrix wafers voltages from 1800 6500 range devices wafer) released production 1998 wafer), 3.5" wafer) devices (118 wafer) planned release 1999. product range corresponding short form data presented section basic product philosophy same Phase Control Thyristors (PCTs). Standard devices described data sheets, flexibility irradiation testing process gives opportunities adapted standard devices. wafer design, mechanical design, manufacturing testing Bi-Directional Control Thyristors (BCTs) based same technology philosophy well proven PCTs. combination with extensive qualification newly developed devices this assures that same high quality reliability achieved. Bi-Directional Control Thyristor (BCT) family strong complement Semiconductors' present family, increased resources application, customer technology, rating evaluation assures that continue support customers' demands with even more competitive product range.
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Product Matrix Short Form Data
matrix below gives overview planned devices family. data given below represents thyristor-half" device. Type ordering number ITAVM Tc=70°C 1580 1845 1390 1700 1850 2350 3000 1800 2500 ITSM 10ms Tvjm 18.0 21.0 14.0 22.0 29.0 32.0 43.0 47.0 32.0 42.0 Tvjm RthJC RthCH Housing type
5STB 16H2800 5STB 18H1800 5STB 09M6500 5STB 13N6500 5STB 17N5200 5STB 18N4200 5STB 24N2800 5STB 27N1800 5STB 18U6500 5STB 25U5200 2800 1800 6500 6500 5200 4200 2800 1800 6500 5200
2800 1800 5600 5600 4400 4200 2800 1800 5600 4400
Tvjm 0.82 0.83 1.25 1.20 1.02 0.96 0.85 0.88 1.20 1.00
Tvjm 0.37 0.23 0.86 0.60 0.32 0.28 0.16 0.103 0.43 0.22
K/kW
K/kW
devices housing wafer) except 5STB 27N1800 available production quantities 1998. devices U-type housing (118 wafer) available sample quantities 1999 production quantities 2000.
device housing wafer), housing wafer) 5STB 27N1800 will available upon request. Final data sheets released devices Nhousing tentative data sheet available other types. Final data sheets those will released soon devices approved released production.
H-housing
N-housing
M-housing Fig. 2.1: Housing outline different products.
U-housing
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Design
unique device, bringing customer advantages having thyristors package: enabling more compact equipment design, simplifying cooling system increasing system reliability. success technology based compatibility process design with ABB's well established range. Reliability guaranteed well proven negative bevel junction termination free floating silicon technologies. Design Criteria electrical behaviour corresponds that anti-parallel thyristors (e.g. approximately area each 96mm wafer diameter) integrated onto silicon slice, (figure 3.1). Each thyristor-half performs like corresponding full-wafer thyristor respect static dynamic properties.
Fig. 3.1: Schematic cross-section wafer showing thyristor-halves defining forward voltage directions VA(t) VB(t). Later text these voltages will labelled VD(A)(t) VD(B)(t) better clarity about forward reverse directions. major challenge integration thyristor-halves crosstalk between halves. photomask been designed with high focus avoiding harmful crosstalk effects under relevant operating conditions. Electrical performance shows very high uniformity between halves device parameters such reverse recovery charge on-state voltage. This demonstrated figures 3.3. Figure compares spread thyristorhalves against spread thyristor-halves devices tuned electron irradiation have fixed on-state voltage. Figure shows leakage current distributions 4400 110°C.
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Number events Thyristor half 3000 3100 3200 3300 3400 [µAs] 3500 3600 3700 Thyristor half
Fig. 3.2: Histogram reverse recovery charge distribution thyristor-halves sample devices.
forward blocking Number events forward blocking
Leakage current [mA]
Fig. 3.3: Histogram leakage current 4400 thyristor-halves blocking forward direction. Sample devices.
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Special Features Under off-state blocking conditions unique reverse direction exists, both voltage polarities correspond forward blocking states thyristor-half thyristor-half respectively. This effect specification parameter terminology. There therefore extra reverse blocking requirement standard Phase Controlled Thyristor (PCT). wafer anode cathode regions each face. thyristors identified wafer letters central gate metallisation, (figure 3.1). housings have been designed correspond size standard range. cathode thyristor-half faces large flange side housing (the cathode side standard element). cathode connections thyristor-half made through wall ceramic nearest unflanged side (the anode side standard element). Differently sized connectors thyristor gate cathode pairs prevent false connection device during installation maintenance. Fixed current collectors specially machined molybdenum discs allow accurate reliable centering wafer sandwich housing without need centering rings. Outlines
housing dimensions given product matrix (figure 2.1).
Surge Current Behaviour classical thyristor maximum allowable surge current depends whether reverse forward voltage applied after current transient. most critical case forward voltage. Evidently BCT, reverse voltage thyristor simultaneously forward voltage thyristor (fig. 3.4). makes difference reapplied voltage after surge current pulse positive forward direction) with respect thyristor which formerly conducting (thyristor example, case positive with respect counterpart which formerly conducting (case situation corresponding re-applied forward voltage classical thyristor (case surge current limit similar classical thyristor equal area. case often relevant applications, however, where classical thyristor exposed reverse re-applied voltage only, i.e. case situation unique appears, where edge regions close separation region most sensitive. mask layout been designed such that separation region strong enough prevent failure these sensitive regions.
Separation region IT(A) VD(B) VD(A) VD(B) VD(A)
formerly conducting)
side
side (formerly conducting)
Fig. 3.4: Currents voltages after turn-off thyristor. (a): circuit diagram, (b): separated into thyristors, (c): schematic view wafer. regions most sensitive respect surge current (with re-applied "reverse" voltage) capability BCT. Crosstalk Again, integration thyristors wafer leads unique situation when limit approached application. reason again that reverse voltage used turn conducting thyristor-half positive voltage counterpart (fig. 3.5). regions well their connecting area would most sensitive locations. photomask been conceived with particular attention maintaining capability separated thyristors.
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IT(A)
VD(B)
VD(A)
VR(A)
VR(B)
Fig. 3.5: Typical current voltage waveforms after turn-off thyristor. reverse voltage thyristor-half simultaneously forward voltage thyristor-half. holding time larger than equal recovery time BCT. From design point view, load cycling expected induce different stresses movements device housing than classical thyristor. experiments, however, perceivable difference load cycle capability been found. comparison with classical thyristor, need other high-voltage blocking junction termination measures. particular, separation region does carry significant lateral voltage drops; even short-circuited metallisation both wafer sides. Therefore, voltage blocking reliability design good that classical thyristor. full characterisation approval procedure elucidated section
Quality Reliability 3.5.1 Quality Since basically nothing more than thyristors integrated wafer, most quality issues handled classical thyristors. BCTspecific parameters tested separately addition satisfy quality requirements described below section particular, crosstalk tests essential part qualification procedure. 3.5.2 Reliability
User' Guide
mentioned before, monolithically integrating high performance PCTs (Phase Control Thyristors) same silicon wafer housing. Consequently, definitions characterising parameters practically almost same those PCT. there exceptions which will explained this section. definitions parameters explained this document described Semiconductors data book. data book also gives application information PCTs which applicable BCTs well. BCT-Specific Features 4.1.1 Mechanical Design reduce logistical problems both manufacturer customer, most mechanical parts same PCT. This brings advantage having outer dimensions
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clamping forces same standard range Semiconductors. This enables user have same mechanical clamping design both BCT, which gives good cost optimisation potential applications where both PCTs BCTs used. major difference exists though, that that gate auxiliary cathode contacts.
Connecting gate wire intended thyristor that thyristor vice versa will most applications lead destruction several components. avoid this, cathode contact side fast-on connector size while cathode contact side fast-on connector size This feature makes mounting procedure safe, since possible connect wrong gate wire either side.
Fig. 4.1: outline showing gate cathode. housing wall, different connectors used thyristor-halves avoid incorrect connection gate wires. 4.1.2 Electrical Parameters most electrical parameters concerned, data same standard range. This enables user, example, utilise same gate driver units both types devices. design makes necessary define certain parameters different standard PCT. absence unique reverse direction makes differentiation between forward reverse voltages obsolete. device forward blocking voltage characteristics both directions. blocking voltage current parameters necessary specify following: maximum repetitive voltage level that able block either direction. voltage defined half-sine voltage pulses line frequency Exceeding specified maximum will lead uncontrolled triggering thermal runaway which usually ends with device failure. specifies maximum leakage current when applied. measured with half sine pulses Tvjmax. decrease junction temperature will lead decreased leakage current. maximum surge voltage level able block. represents BCT' ability withstand non-repetitive voltage transients with pulse width less, which caused overvoltage transients switching. Exceeding lead uncontrolled triggering device destruction. documentation, specified devices with 4400 since those devices equal over whole temperature range. devices with 4400 equal junction temperatures temperatures below possible utilise values VSM. example, possible 5STB 13N6500 6500
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while 5600 must exceeded specifies maximum leakage current when applied. measured Tvjmax with Again, decrease junction temperature will lead decreased leakage current. definition parameters ITSM, VGD, IGD, (di/dt)crit, (dv/dt)crit data sheets, abbreviations used. voltage forward direction thyristor-half that will just been triggered, case just conducted current, case Analogously, voltage reverse direction thyristor-half that active parameter described. design manufacturing technology Semiconductors makes possible produce BCTs with thyristor functions with almost identical behaviour. each electrical parameter, value curve only given data sheet. value curve given valid both thyristor functions BCT. curves data sufficient application circuit design, and, from electrical point view, particular care taken which direction device being mounted. 4.1.3 Thermal Parameters thermal resistance data thermal impedance curve given thyristor half with condition that both thyristors operation soft starter. radial heat spreading thermal values operation with only thyristor half time, example DC-drive, will slightly reduced. Studies this effect on-going foreseen that revisions data sheets include thermal resistance figures. both thyristor halves operating only thyristor half operating. Application Examples been developed complement standard product range Semiconductors. target reduce cost thereby increase competitiveness customers those areas where common encapsulation antiparallel thyristors yields advantages. this paragraph, three application examples given which show advantage using comparison with
standard solution. advantage common three examples increased reliability. produced same manufacturing facility PCTs, uses same basic parts, resulting product with same high MTTF figure each standard PCTs. Since replaces PCTs, now, MTTF whole assembly significantly improves. addition, seen application examples, number other (mechanical electrical) parts also reduced, that further increase reliability whole equipment obtained. 4.2.1 Static Compensation (SVC) efficient power transmission, reactive power consumed asynchronous motors furnaces, example, compensated, keep power factor transmission line close unity. several means accomplish this Static Compensation. advantage over rotating compensators that lacks moving parts. components included installation capacitors, inductors thyristor stacks. thyristor stacks consist number series-connected thyristors, which normally have additional components parallel them. These components serve reduce voltage stresses caused turn-off process thyristor share static transient voltages equally between thyristors. sharing transient voltages well reduction turn-off over-voltage peak, resistor capacitor series often used. sharing static voltage kept equal placing additional resistors parallel each thyristor. Since each stack standard thyristors only conduct current direction, stacks have used parallel each phase equipment. This means that mechanical parts needed, such heat sinks, insulators clamps well some electrical components have used each current direction, seen figure 4.2. Using BCTs instead PCTs, figure 4.2, only stack phase needed, since current controlled both directions. Depending choice system solution, required number electrical mechanical components will reduced This reduction significant impact cost foot print enables manufacturer substantially raise competitiveness product.
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Fig. 4.2: Comparison between thyristor stack assemblies with conventional solution left solution right. stack itself, solution needs only mechanical electrical parts that used solution.
4.2.2 Motor Drives control speed electrical motors, drive commonly used, since other means regulating speed have become costly consume much energy. main application areas drives equipment drives feeding sections drives with return (regeneration) energy power grid during breaking. Another application area that cycloconverters large synchronous motors. application example chosen below regenerative drive. standard solution regenerative drive so-called (B6C)2 connection, which consists fully controlled rectifiers anti-parallel connection. This accomplished using assembly with thyristors. example this given figure 4.3.
When BCTs utilised, (B6C)2 bridge built with only semiconductor components. Depending solution used, (B6C)2 bridge then either reduced height width. this application enables more compact solution requiring less mechanical components like heat sinks supports. choice more compact solution again means foot print reduction larger system, like rolling mill line-up, about This major cost saving, since building electrical rooms quite expensive. also enable high power drives equipment located rooms with reduced height, harbour crane, avoiding paralleling power bridges when more power needed. This solution drawn figure 4.3. user normally save RC-circuit fuse cost after substituting BCTs, since these components already shared classical solution.
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Fig. 4.3: Comparison between assemblies four-quadrant drives. left assembly using PCTs, right made BCTs. example shows possibility reducing height when using BCTs which enables high power drives installed locations with height restrictions, like harbour crane. anti-parallel thyristors having pair phase. seen figure 4.4, these anti-parallel thyristors 4.2.3 Soft Starters directly replaced BCT. drive, When starting asynchronous machine which this substitution leads reduced number directly from three-phase supply net, machine mechanical parts like mounting clamps, enables feeding circuit will heavily loaded more compact solution. high starting currents. reduce this stress, soft starter often used. This soft starter consists pairs
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Fig. 4.4: Comparison three-phase soft starter assemblies using PCTs BCTs. left assembly made PCTs, right using BCTs. solution enables reduction number required mechanical parts therefore size. 4.2.4 Improvement potential using designs offer considerable volume part counts reduction over conventional ones. table below summarises expected improvements application power level. Application DC-drive DC-drive Soft starter Soft starter SVCB Power level 2000 MVAr Anticipated average volume improvement Anticipated average parts count reduction
Compared conventional solutions.
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Production Testing Product Qualification
testing Bi-Directional Control Thyristor (BCT) based same testing sequence philosophy well proven PCT. combination with extensive qualification newly developed devices this assures that same high quality reliability achieved. routine production testing well qualification test procedures described below. Sections 1996 edition data book Semiconductors describe related documents standards well product traceability failure analysis. These sections also applicable BCT. General Production Testing Group Testing: 100% Routine Production Testing Parameter VRMA VRMB VSMA VSMB dv/dt critA dv/dt critB IGTA VGTA IGTB VGTB ITSMA ITSMB Temperature 25/125°C 25/125°C 125°C 125°C 125°C 125°C 125°C 125°C 125°C 125°C 25°C 25°C 25°C 25°C 125°C 125°C 125°C 125°C Type test 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% 100% table below shows parameters that 100% routine tested production. basic electrical parameter testing performed wafer level (before after electron irradiation) after packaging (standard customised final test procedure), exactly PCTs. main difference lies fact that thyristor-halves that device measured twice with respect many parameters. Examples are: recovery charge thyristor-half recovery charge thyristor-half VRMA: maximum forward repetitive voltage thyristor-half VRMB: maximum forward repetitive voltage thyristor-half
Protocols test report test report test report test report test report test report test report test report test report test report test report test report test report test report test report test report test report test report
Remark
5200 6500V devices 5200 6500V devices tested wafer level tested wafer level tested wafer level tested wafer level
adapted standards, tested wafer level adapted standards, tested wafer level adapted standards adapted standards
ITSM with re-applied voltage most common requirements measurements adapted standard products. Other parameters listed table equally agreed upon. test reports computer print-outs final test. Since dv/dt, Group Testing: Control Tests (Scheduled Product Audits) order assure monitor long-term voltage stability, Group testing integrated final screening. Eight
measured wafer level, these values included test report where this required customer. test sequence lay-out test report adapted standard products defined spec review process described data book. devices selected undergo voltage stability test (VDC forward voltage thyristor-half maximum forward repetitive voltage). typical pass criterion that drift leakage current
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Examination Test
Sub-group Test Category Ref. MIL-STD750C Ref.
Reference Documents
Conditions
Inspection Requirements
Notes
Endurance: blocking
1048
80°C.Tvjmax
Qualification Approval Tests Qualification Maintenance Tests qualification procedure been particularly necessary introduce additional characterisation test assuring that there disturbing interaction between separated antiparallel thyristor-halves located wafer. This socalled "crosstalk test" performed follows. crosstalk test, circuit shown fig. utilised. capacitor
charged 2500 then discharged (iTmax 2000 through inductor after triggered. When, example, thyristor-half turned off, reverse voltage develops across This voltage simultaneously forward voltage thyristor-half (figure 3.5). peak amplitude depends capacitance resistance snubber used. With set-up, somewhat below VSM.
RV=68
L=1.3mH
C=1mF
Rsh=1m
Fig. 5.1: Test circuit crosstalk measurement designs undergo rigorous qualification testing (Group testing), whereby data sheet values verified reliability ascertained: this essential part development model. BCTs qualified released production sale when defined tests have been passed. Most these tests also part bi-annual reliability monitoring tests (Group testing). table below summarises Semiconductors' commitment reliability.
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Examination Test
SubTest Category group
Reference Documents
750C 7021 Internal Ref.
Conditions
Inspection Requirements Notes
Characteristics inspection Complementary characteristics inspection Verification maximum ratings Endurance: Storage high temperature Endurance: Storage temperature Endurance: blocking
Parameters quantities applicable test specification Internal Ref. Parameters quantities applicable test specification Internal Ref. Parameters quantities applicable test specification 68-2-2 1000 Tstg
1031.4 7021 B-10 68-2-1 7021 B-12 747-6
Note Note Note
Tstg
Endurance: blocking Endurance: blocking
Endurance: Thermal cycling load (Thermal fatigue) Endurance: Operating life
D10a
Rapid change temperature Shock
1000 Sine wave VD(R) 0.7.0.8 VD(R)RM 1048 1000 90°C.Tvj 7021 B-20 VD(R) 0.7.0.8 VD(R)RM Internal Ref. 1000 25°C VD(R) VD(R)RM de-rated voltage) 747-6 80°C 100°C 1037.1 1.10 cycles (Traction) 7021 B-18 0.2.10 cycles (Industry) Internal Ref. 1.10 on/off cycles with ITGQM max, specific drive snubber circuits 68-2-14 100°C, cycles, liquid 1056.2 liquid
7021 68-2-27 2016.2 7021 68-2-6
Note Note
Note
Note
Note Note
D10b
Vibration
D11a
Shock
2056 7021 A-10 68-2-27 2016.2
D11b
Impact Shock (Bump)
68-2-29
D11c
Vibration
68-2-6
Salt mist
2056 68-2-11
Components stack shocks direction Components stack 0.75 cycles axis, Components transport shocks direction Components transport 1000 shocks direction Components transport 0.35 cycles axis, 35°C, NaCl, days
Note
Note
Note
Note
Note
Robustness terminations
1046.2 68-2-21 2036.3 7021 A-11
Tension,
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Notes:
device must meet requirements listed under note Failure criteria Diodes: Failure criteria Puck devices: significant IRRM (Tvj max) USL, corrosion. Failure criteria Thyristors: applicable BCT-devices. IRRM, IDRM (Tvjmax) USL, (25°C) USL, V(Tvj max) Failure criteria Puck devices: Integrity package materials, wafers, sealing, lead connections
Customer Technology Application Support
extracted from data sheets. Moreover, customer need support advice about most efficiently utilise control semiconductor device circuit. Semiconductors wealth experience offer this field well. This includes areas such power loss calculations, temperature calculations under transient conditions, gate driving. Very powerful versatile tools available perform application-oriented simulations device behaviour well perform special application-oriented tests semiconductor devices. need information support above areas, please contact sales organisation your nearest Semiconductors agent.
most applications explicit data sheets Semiconductors give sufficient information design powerful competitive application circuit. some cases, however, customer projects with revised circuit concepts, that somewhat different thyristor parameters desirable. This includes trade-off between conduction switching losses, often goes beyond that. also described above Semiconductors data book, so-called "adapted standard" product produced manner analogous standard thyristors. During development circuit technologies concepts, often happens that very specific device data relationships needed which cannot
Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone (0)62 6419 (0)62 6306 Internet www.abbsem.com
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