6000 3000 1.70 0.60 3800 Gate turn-off Thyristor 5SGT 30J600

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6000 3000 1.70 0.60 3800 Gate turn-off Thyristor 5SGT 30J600

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6000 3000 1.70 0.60 3800
Gate turn-off Thyristor
5SGT 30J6004
Doc. 5SYA 1212-04 Aug. 2000
Patented free-floating silicon technology on-state switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating 5SGT 30J6004 buffered layer, Transparent Emitter (non-shorted anode) with exceptionally dynamic static losses gate drive requirements. Housed industry-standard wide housing, ideally suited high reliability applications such Transportation Medium Voltage Drives. Blocking
VDRM VRRM IDRM IRRM VDClink Repetitive peak off-state voltage Repetitive peak reverse voltage Repetitive peak off-state current Repetitive peak reverse current Permanent voltage failure rate 6000 3800 VDRM VRRM
Ambient cosmic radiation level open air.
Mechanical data (see Fig.
Mounting force Acceleration: Device unclamped Device clamped Weight Surface creepage distance strike distance m/s2 m/s2 min. max.
Semiconductors reserves right change specifications without notice.
5SGT 30J6004
Data
On-state
ITAVM ITRMS ITSM Max. average on-state current Max. on-state current Max. peak non-repetitive surge current Limiting load integral 1030 1620
2.88106 0.80106
Half sine wave,
3000
110°C
After surge:
On-state voltage Threshold voltage Slope resistance Holding current
3.50 1.70 0.60
4000
Gate
VGRM IGRM Gate trigger voltage Gate trigger current Repetitive peak reverse voltage Repetitive peak reverse current VGRM
Turn-on switching
di/dtcrit Max. rate rise on-state current ton(min) Delay time Rise time Min. on-time Turn-on energy pulse A/µs A/µs 2.50 200Hz 3000 diG/dt A/µs VDRM 3000 A/µs A/µs
di/dt diG/dt
Turn-off switching
ITGQM controllable turn-off current toff(min) Eoff IGQM Storage time Fall time Min. off-time Turn-off energy pulse Peak turn-off gate current 25.0 16.0 3000 VDRM VDRM diGQ/dt A/µs VDRM A/µs
diGQ/dt
ITGQ ITGQM
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Doc. 5SYA 1212-04 Aug. 2000 page
5SGT 30J6004
Thermal
RthJC Storage operating junction temperature range Thermal resistance junction case RthCH Thermal resistance case heat sink Analytical function transient thermal impedance: K/kW K/kW K/kW K/kW K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled -40.110°C
thJC
0.17
0.01
0.001
(K/kW)
Fig.
Transient thermal impedance, junction case.
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Doc. 5SYA 1212-04 Aug. 2000 page
5SGT 30J6004
Fig.
On-state characteristics
Fig.
Average on-state power dissipation average on-state current.
Fig.
Surge current fusing integral pulse width
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Doc. 5SYA 1212-04 Aug. 2000 page
5SGT 30J6004
Fig.
Forward blocking voltage gate-cathode resistance.
Fig. Static dv/dt capability: Forward blocking voltage neg. gate voltage gate cathode resistance.
Fig. Forwarde gate current forard gate voltage.
Fig. Gate trigger current junction temperature
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Doc. 5SYA 1212-04 Aug. 2000 page
5SGT 30J6004
Fig. Turn-on energy pulse on-state current turn-on voltage.
Fig. Turn-on energy pulse on.-state current current rise rate
Common Test conditions figures
diG/dt
A/µs
Definition Turn-on energy:
ITdt
Common Test conditions figures
Definition Turn-off energy:
ITdt
ITGQ
Fig. Turn-on energy pulse on-state current turn-on voltage.
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Doc. 5SYA 1212-04 Aug. 2000 page
5SGT 30J6004
Fig. Turn-off energy pulse turn-off current peak turn-off voltage. Extracted gate charge turn-off current.
Fig. Turn-off energy pulse turn-off current snubber capacitance.
Fig. Required snubber capacitor allowable turn-off current.
Fig. Turn-off energy pulse, storage time peak turn-off gate current junction temperature
Fig. Storage time peak turn-off gate current neg. gate current rise rate.
Fig. Storage time peak turn-off gate current turn-off current
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Doc. 5SYA 1212-04 Aug. 2000 page
5SGT 30J6004
Fig. General current voltage waveforms with GTO-specific symbols
Fig. Outline drawing. dimensions millimeters represent nominal values unless stated otherwise.
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Doc. 5SYA 1212-04 Aug. 2000 page
5SGT 30J6004 Reverse avalanche capability operation with antiparallel freewheeling diode, reverse voltage exceed rate value VRRM stray inductance diode turn-on voltage spike high di/dt. then driven into reverse avalanche. This condition dangerous provided avalanche time current below 1000 respectively. However, gate voltage must remain negative during this time. Recommendation
Semiconductors reserves right change specifications without notice.
Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet (0)62 6419 (0)62 6306 info@ch.abb.com www.abbsem.com
Doc. 5SYA 1212-04 Aug. 2000

6000 3000 1.70 0.60 3800 Gate turn-off Thyristor 5SGT 30J600

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