1558.3 15A, 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

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1558.3 15A, 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

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RFP15N05L, RFP15N06L
1558.3
15A, 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs
These N-Channel enhancement mode silicon gate power field effect transistors designed applications such switching regulators, switching converters, motor drivers, relay drivers drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA0522.
Features
15A, rDS(ON) 0.140 Design Optimized Gate Drives Driven from QMOS, NMOS, Circuits Compatible with Automotive Drive Requirements Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics
Ordering Information
PART NUMBER RFP15N05L RFP15N06L NOTE: PACKAGE TO-220AB TO-220AB BRAND RFP15N05L RFP15N06L
High Input Impedance Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
When ordering, entire part number.
Symbol
Packaging
JEDEC TO-220AB
DRAIN (TAB)
SOURCE DRAIN GATE
6-229
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP15N05L, RFP15N06L
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP15N05L 0.48 RFP15N06L 0.48 UNITS W/oC
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Above 25oC, Derate Linearly Operating Storage Temperature .TJ, TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS 250µA, VGS(TH) IDSS VDS, 250µA (Figure 48V, 48V, 125oC 30V, 7.5A, 6.25 (Figures RFP15N05L, RFP15N06L 0.140 2.083
oC/W
UNITS
Drain Source Breakdown Voltage RFP15N05L RFP15N06L Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
IGSS rDS(ON) CISS COSS CRSS td(ON) td(OFF)
±10V, 15A, (Figures 25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTE: Pulsed: pulse duration 300µs maximum, duty cycle Repititive rating: pulse width limited maximum junction temperature. SYMBOL 7.5A dISD/dt 100A/µs TEST CONDITIONS UNITS
6-230
RFP15N05L, RFP15N06L Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CONTINUOUS
Unless Otherwise Specified
25oC CURVES MUST DERATED LINEARLY WITH INCREASE TEMPERATURE
OPERATION THIS AREA LIMITED rDS(ON)
RFP15N05L
RFP15N06L
CASE TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
1000
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE FORWARD BIAS SAFE OPERATING AREA
IDS, DRAIN SOURCE CURRENT IDS, DRAIN SOURCE CURRENT PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC 4.5V 3.5V 2.5V VDS, DRAIN SOURCE VOLTAGE 7.5V
-40oC 125oC 25oC PULSE DURATION 80µs DUTY CYCLE 0.5%
125oC
-40oC
VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% RESISTANCE 125oC 25oC
10V, PULSE DURATION 80µs DUTY CYCLE 0.5%
rDS(ON), DRAIN SOURCE
-40oC
DRAIN SOURCE CURRENT
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
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RFP15N05L, RFP15N06L Typical Performance Curves
NORMALIZED GATE THRESHOLD VOLTAGE 250µA CAPACITANCE (pF)
Unless Otherwise Specified (Continued)
1600 1400 1200 1000 CRSS COSS CISS 1MHz CISS CRSS COSS
JUNCTION TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
DRAIN SOURCE VOLTAGE BVDSS
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE IG(REF) 0.5mA GATE SOURCE VOLTAGE BVDSS BVDSS
0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE
(REF) (ACT) TIME (µs) (REF) (ACT)
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
6-232
RFP15N05L, RFP15N06L Test Circuits Waveforms
(Continued)
Qg(TOT)
Qg(5) Qg(TH) IG(REF)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
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1558.3 15A, 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

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