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KSE45H Series General Purpose Power Switching Applications C


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KSE45H Series
KSE45H Series
General Purpose Power Switching Applications
Collector-Emitter Saturation Voltage: VCE(sat) (MAX)@-8A Fast Switching Speeds Complement KSE44H TO-220 2.Collector 3.Emitter
1.Base
Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCEO Collector-Emitter Voltage Parameter KSE45H KSE45H KSE45H KSE45H 10,11 Value 1.67 Units
VEBO TSTG
Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICES IEBO Parameter Collector Cut-off Current Emitter Cut-off Current Current Gain KSE45H KSE45H 8,11 *Collector-Emitter Saturation Voltage KSE45H KSE45H 8,11 *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn Time Storage Time Fall Time Test Condition Rated, VCEO, -1.5 Min. Typ. Max. -100 Units
VCE(sat)
0.8A 0.4A 0.8A 10V, 0.5A 10V, 1MHz =20V, 0.5A
VBE(sat) tSTG
Pulse test: PW300µs, Duty cycle2%
©2000 Fairchild Semiconductor International
Rev. February 2000
KSE45H Series
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
hFE, CURRENT GAIN
BE(sat)
-0.1
VCE(sat)
-0.01
-0.1
-0.01 -0.01
-0.1
-100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure current Gain
Figure Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
1000
f=1MHZ
IC[A], COLLECTOR CURRENT
Cob[pF], CAPACITANCE
100µ
1000
-100
10,11
VCB[V], COLLECTOR-BASE VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure Collector Output Capacitance
Figure Safe Operating Area
PC[W], POWER DISSIPATION
CASE TEMPERATURE
Figure Power Derating
©2000 Fairchild Semiconductor International
Rev. February 2000
KSE45H Series
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ±0.10
(1.70)
1.30 -0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45°
0.50 -0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions Millimeters
©2000 Fairchild Semiconductor International Rev. February 2000
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST® FASTrGTODISCLAIMER
QFETQSQuiet SeriesSuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTinyLogicUHCVCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR INTERNATIONAL. used herein: Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
©2000 Fairchild Semiconductor International
Rev.

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