Power management (dual digital transistors) IMD16A !Features
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IMD16A
Power management (dual digital transistors)
IMD16A
!Features digital class transistors package. 500mA driven. VCE(sat) drive transistors power dissipation. !External dimensions (Units
0.95 0.95
0.15
0to0.1
0.3to0.6
Each lead same dimensions
ROHM SMT6 EIAJ SC-74
!Package, marking, packaging specifications
Part Package Marking Code Basic ordering unit (pieces) IMD16A SMT6 T108 3000
!Equivalent circuit
DTr1
DTr2
!Absolute maximum ratings (Ta=25°C) DTr1 (PNP)
Parameter Supply voltage Input voltage Output current Symbol Limits -500 Unit
DTr2 (NPN)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO Limits Unit
Total
Parameter Collector power dissipation Junction temperature Storage temperature Symbol Tstg Limits 300(TOTAL) +150 Unit
200mW element must exceeded.
IMD16A
!Electrical characteristics (Ta=25°C) DTr1
Parameter Input voltage Output voltage Input current Output current current gain Transition frequency Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) IO(off) Min. 1.54 Typ. Max. -0.3 -0.3 -0.5 2.86 Unit Conditions VCC=-5V IO=-100µA VO=-0.3V IO=-20mA IO/II=-50mA /-2.5mA VI=-5V VCC=-50V VI=0V IO=-50mA VO=-5V VCE=-10V IE=50mA f=100MHz
Measured using pulse current. Transition frequency mounted transistor.
DTr2
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage current transfer ratio Transition frequency Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) Min. Typ. Max. Unit IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=1mA/0.1mA VCE=5V IC=1mA VCE=10V IE=-5mA f=100MHz Conditions
Transition frequency mounted transistor.
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