Shottky barrier diode RSX301LA-30 !Application General recti
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RSX301LA-30
Shottky barrier diode
RSX301LA-30
!Application General rectification. !External dimensions (Unit
CATHODE MARK
1.5±0.2 0.2±0.15
!Features Small Thin power mold type (PMDT). High reliability.
3.8±0.2
!Structure Silicon Epitaxial Planer
ROHM EIAJ JEDEC
2.6±0.2
0.95±0.1
!Absolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc.) Junction temperature Storage temperature
Glass epoxy substrate, Tc=90°C MAX.
Symbol IFSM Tstg
Limits
Unit
!Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Symbol Min. Typ. Max. 0.42 Unit Conditions IF=3.0A VR=15V VR=30V
4.7±0.3
RSX301LA-30
!Electrical characteristic curves (Ta=25°C)
10000 100000 10000
Ta=150°C
10000 1000
Ta=125°C
1000
Ta=75°C
Ta=25°C
TERMINAL CAPACITANCE (pF)
FORWARD CURRENT (mA)
REVERSE CURRENT (µA)
Ta=150°C Ta=125°C Ta=75°C Ta=25°C -25°C
f=1MHz Ta=25°C
1000
-25°C
FORWARD VOLTAGE (mV)
REVERSE VOLTAGE
REVERSE VOLTAGE
Fig.1 Forward Temperature Characteristics
Fig.2 Reverse Temperature Characteristics
Fig.3 Capacitance Between Terminals Characteristics
AVERAGE RECTIFIED FOWARD CURRENT
AVERAGE RECTIFIED FOWARD CURRENT
30kV Over
30kV Over
(=180)
VR=15V Tj=150°C
(=180)
(kV)
VR=15V Tj=150°C
200pF Machine Model
100pF 1.5k Human Model
AMBIENT TEMPERATURE (°C)
CASE TEMPERATURE (°C)
Fig.4 Derating Curve (IO-Ta)
Fig.5 Derating Curve (IO-Tc)
Fig.6
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