Shottky barrier diode RSX201L-30 Application High efficient
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RSX201L-30
Shottky barrier diode
RSX201L-30
Application High efficient shottky barrier diode. Rectifier power supply units. Battery protection against reversal current External dimensions (Unit
CATHODE MARK 1.5±0.2
1.2±0.3
Features Small mold type power diode (PMDS (4526) High reliability (ESD resistance typ=22kV (machine model) (VF=0.39V IR=50µA 30V)
2.6±0.2
4.5±0.2
0.1±0.02
2.0±0.2
ROHM PMDS EIAJ Manufacturing date EX2003.9 JEDEC
5.0±0.3
Structure Silicon Epitaxial Planer
Absolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward peak surge current (60Hz 1cyc.) Junction temperature Storage temperature Symbol IFSM Tstg Limits Unit
Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Electro static discharge resistance Symbol Min. Typ. 0.39 Max. 0.44 Unit Conditions IF=2A VR=30V VR=10V, f=1MHz C=200pF, 1pulse
RSX201L-30
Electrical characteristic curves (Ta=25°C)
10000 100000
FORWARD CURRENT (mA)
REVERSE CURRENT (µA)
1000
Ta=150°C Ta=125°C Ta=75°C Ta=25°C -25°C
10000 1000
Ta=125°C
TERMINAL CAPACITANCE (pF)
Ta=150°C
10000
f=1MHz Ta=25°C
Ta=75°C
1000
Ta=25°C
-25°C
FORWARD VOLTAGE (mV)
REVERSE VOLTAGE
REVERSE VOLTAGE
Fig.1 Forward Temperature Characteristics
Fig.2 Reverse Temperature Characteristics
Fig.3 Capacitance Between Terminals Characteristics
AVERAGE RECTIFIED FOWARD CURRENT
PMDS (j-a) =94°C When mounted glass epoxy board.
AVERAGE RECTIFIED FOWARD CURRENT
1000
(=180)
(j-a)
VR=15V Tj=150°C
(=180)
VR=15V Tj=150°C
1000
AMBIENT TEMPERATURE (°C)
CASE TEMPERATURE (°C)
Fig.4 Thermal resistance
Fig.5 Derating curve (IO-Ta)
Fig.6 Derating curve (IO-Tc)
Ta=25°C
30kV Over
8.3ms 8.3ms 1cyc.
(kV)
IFSM
Ta=25°C 1pulse
200pF
Machine Model
100pF 1.5k
Humanbody Model
(Cyc)
Fig.7 Forward peak surge current (Acctual data)
Fig.8 resistance
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